″INHIBITION EFFECT″ OF A TRICHLOROETHANE OXIDATION TO SUPPRESS THE STACKING-FAULT NUCLEATION IN SILICON.

被引：0

作者：

Claeys, C.L. ^{[1
]}

Declerck, G.J. ^{[1
]}

Van Overstraeten, R.J. ^{[1
]}

机构：

[1] K.U. Leuven, E.S.A.T. Laboratory, Kardinaal Mercierlaan 94, B-3030 Heverlee, Belgium

来源：

| 1600年 / 51期

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[1] THE INHIBITION EFFECT OF A TRICHLOROETHANE OXIDATION TO SUPPRESS THE STACKING-FAULT NUCLEATION IN SILICON
CLAEYS, CL
DECLERCK, GJ
VANOVERSTRAETEN, RJ
JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6183 - 6188
[2] INHIBITION EFFECT OF A CHLORINE OXIDATION TO SUPPRESS THE STACKING-FAULT NUCLEATION IN SILICON
CLAEYS, CL
DECLERCK, GJ
VANOVERSTRAETEN, RJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C359 - C359
[3] ORIENTATION DEPENDENCE OF STACKING-FAULT NUCLEATION IN SILICON
RAVI, KV
PHILOSOPHICAL MAGAZINE, 1975, 31 (02): : 405 - 410
[4] METAL CONTAMINATION ON SILICON SURFACE AND NUCLEATION OF OXIDATION-INDUCED STACKING-FAULT
MAEDA, AS
OGINO, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C108 - C108
[5] ORIENTATION DEPENDENCE OF STACKING-FAULT NUCLEATION AND GROWTH IN SILICON
RAVI, KV
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : C87 - C87
[6] ON THE NUCLEATION OF STACKING-FAULT TETRAHEDRA
HUSSEIN, AA
SCRIPTA METALLURGICA, 1980, 14 (07): : 761 - 764
[7] GETTERING OF STACKING-FAULT NUCLEI IN SILICON BY TRICHLOROETHYLENE OXIDATION
HATTORI, T
APPLIED PHYSICS LETTERS, 1977, 30 (07) : 312 - 314
[8] ORIENTATION DEPENDENCE OF OXIDATION STACKING-FAULT DENSITY IN SILICON
PEKAREV, AI
KRASNOVA, GF
NEMTSEV, GZ
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (01): : 327 - 330
[9] STACKING-FAULT NUCLEATION AND GROWTH IN CVD SILICON EPITAXIAL-FILMS
PETROFF, PM
SAVAGE, A
KATZ, LE
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C118 - C118
[10] ANALYSIS OF OXIDATION ENHANCED AND RETARDED DIFFUSIONS AND GROWTH OF OXIDATION STACKING-FAULT IN SILICON
YOSHIDA, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (06): : 967 - 971

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