INHIBITION EFFECT OF A CHLORINE OXIDATION TO SUPPRESS THE STACKING-FAULT NUCLEATION IN SILICON

被引：0

作者：

CLAEYS, CL ^{[1
]}

DECLERCK, GJ ^{[1
]}

VANOVERSTRAETEN, RJ ^{[1
]}

机构：

[1] CATHOLIC UNIV LEUVEN,ESAT LAB,B-3030 HEVERLE,BELGIUM

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C359 / C359

页数：1

共 50 条

[1] THE INHIBITION EFFECT OF A TRICHLOROETHANE OXIDATION TO SUPPRESS THE STACKING-FAULT NUCLEATION IN SILICON
CLAEYS, CL
DECLERCK, GJ
VANOVERSTRAETEN, RJ
JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6183 - 6188
[2] ″INHIBITION EFFECT″ OF A TRICHLOROETHANE OXIDATION TO SUPPRESS THE STACKING-FAULT NUCLEATION IN SILICON.
Claeys, C.L.
Declerck, G.J.
Van Overstraeten, R.J.
1600, (51):
[3] ORIENTATION DEPENDENCE OF STACKING-FAULT NUCLEATION IN SILICON
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[4] METAL CONTAMINATION ON SILICON SURFACE AND NUCLEATION OF OXIDATION-INDUCED STACKING-FAULT
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OGINO, M
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[5] ORIENTATION DEPENDENCE OF STACKING-FAULT NUCLEATION AND GROWTH IN SILICON
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[6] ON THE NUCLEATION OF STACKING-FAULT TETRAHEDRA
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[7] GETTERING OF STACKING-FAULT NUCLEI IN SILICON BY TRICHLOROETHYLENE OXIDATION
HATTORI, T
APPLIED PHYSICS LETTERS, 1977, 30 (07) : 312 - 314
[8] ORIENTATION DEPENDENCE OF OXIDATION STACKING-FAULT DENSITY IN SILICON
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KRASNOVA, GF
NEMTSEV, GZ
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (01): : 327 - 330
[9] STACKING-FAULT NUCLEATION AND GROWTH IN CVD SILICON EPITAXIAL-FILMS
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SAVAGE, A
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C118 - C118
[10] ANALYSIS OF OXIDATION ENHANCED AND RETARDED DIFFUSIONS AND GROWTH OF OXIDATION STACKING-FAULT IN SILICON
YOSHIDA, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (06): : 967 - 971

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