PHOTOEMISSION OF ELECTRONS FROM INTERFACE STATES IN SILICON MOS STRUCTURES.

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作者：
Fertig, W. [1 ]
Pagnia, H. [1 ]
机构：
[1] Technische Hochschule Darmstadt, Darmstadt, West Ger, Technische Hochschule Darmstadt, Darmstadt, West Ger
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| 1600年 / 93期
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摘要：
SEMICONDUCTOR DEVICES, MOS
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