INTERFACE STATES AND IMPURITIES IN MOS STRUCTURES WITH VERY THIN TUNNELING BARRIERS

被引：13
|
作者：
BALK, P [1 ]
THANH, LD [1 ]
EWERT, S [1 ]
KUBALL, M [1 ]
SCHMITZ, S [1 ]
机构：
[1] RHEIN WESTFAL TH AACHEN,INST PHYS 2,D-5100 AACHEN,FED REP GER
来源：
APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(87)90105-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：304 / 310
页数：7
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