INTERFACE STATES AND IMPURITIES IN MOS STRUCTURES WITH VERY THIN TUNNELING BARRIERS

被引：13

作者：

BALK, P ^{[1
]}

THANH, LD ^{[1
]}

EWERT, S ^{[1
]}

KUBALL, M ^{[1
]}

SCHMITZ, S ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS 2,D-5100 AACHEN,FED REP GER

来源：

APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(87)90105-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：304 / 310

页数：7

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