PHOTOEMISSION OF ELECTRONS FROM INTERFACE STATES IN SILICON MOS STRUCTURES.

被引：0

作者：

Fertig, W. ^{[1
]}

Pagnia, H. ^{[1
]}

机构：

[1] Technische Hochschule Darmstadt, Darmstadt, West Ger, Technische Hochschule Darmstadt, Darmstadt, West Ger

来源：

| 1600年 / 93期

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D O I：

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摘要：

SEMICONDUCTOR DEVICES, MOS

引用

共 50 条

[31] COMPARISON OF THE GENERATION OF INTERFACE STATES IN MOS STRUCTURES DUE TO CO-60 AND VUV IRRADIATION ACCOMPANIED WITH PHOTOINJECTION OF ELECTRONS
SCHARF, S
SCHMIDT, M
WULF, F
BRAUNIG, D
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (03) : 460 - 465
[32] TRANSPORT PROPERTIES OF ELECTRONS ON (100) SURFACES - HOLE MOBILITY IN P-TYPE INVERSION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES - PHOTOEMISSION OF HOLES FROM SILICON INTO SILICON DIOXIDE - BARRIER ENERGIES IN MOS STRUCTURES
FANG, FF
FOWLER, AB
COLMAN, D
MIZE, JP
GOODMAN, AM
SNOW, EH
DEAL, BE
MEAD, CA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 674 - &
[33] METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES
KAR, S
DAHLKE, WE
APPLIED PHYSICS LETTERS, 1971, 18 (09) : 401 - +
[34] ION-ELECTRON (CONFIGURATIONAL) INTERFACE STATES IN MOS STRUCTURES
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APPLIED PHYSICS LETTERS, 1979, 35 (10) : 807 - 809
[35] PROCESS-INDUCED INTERFACE AND BULK STATES IN MOS STRUCTURES
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SCHULZ, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : 2201 - 2208
[36] THE IMAGING OF INTERFACE STATES AND TRAPPED OXIDE CHARGE IN MOS STRUCTURES
MCCABE, EM
WILSON, T
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 123 (02): : 549 - 560
[37] METHOD FOR THE DETERMINATION OF THE DISTRIBUTION OF THE CONCENTRATION OF INTERFACE STATES OF MOS STRUCTURES
KRAWCZYK, SK
JAKUBOWSKI, A
SOLID STATE COMMUNICATIONS, 1980, 33 (05) : 535 - 539
[38] INFLUENCE OF X-IRRADIATION ON SILICON-SILICON DIOXIDE INTERFACE OF MOS STRUCTURES
VOLAND, G
PAGNIA, H
APPLIED PHYSICS, 1974, 3 (01): : 77 - 80
[39] Kinetics of two-dimensional electrons and holes in tunneling silicon MOS structures
Altukhov, PD
Kuzminov, EG
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2000, 221 (01): : 439 - 445
[40] PHOTOEMISSION OF ELECTRONS AT THE CU(111)-NA INTERFACE
LINDGREN, SA
WALLDEN, L
SOLID STATE COMMUNICATIONS, 1980, 34 (08) : 671 - 673

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