PHOTOEMISSION OF ELECTRONS FROM INTERFACE STATES IN SILICON MOS STRUCTURES.

被引：0

作者：

Fertig, W. ^{[1
]}

Pagnia, H. ^{[1
]}

机构：

[1] Technische Hochschule Darmstadt, Darmstadt, West Ger, Technische Hochschule Darmstadt, Darmstadt, West Ger

来源：

| 1600年 / 93期

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D O I：

暂无

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学科分类号：

摘要：

SEMICONDUCTOR DEVICES, MOS

引用

共 50 条

[21] CONDUCTANCE ASSOCIATED WITH INTERFACE STATES IN MOS TUNNEL STRUCTURES
CARD, HC
RHODERICK, EH
SOLID-STATE ELECTRONICS, 1972, 15 (09) : 993 - +
[22] DEFECT STRUCTURE AND GENERATION OF INTERFACE STATES IN MOS STRUCTURES
DOTHANH, L
ASLAM, M
BALK, P
SOLID-STATE ELECTRONICS, 1986, 29 (08) : 829 - 840
[23] TRANSIENT CAPACITANCE MEASUREMENTS OF HOLE EMISSION FROM INTERFACE STATES IN MOS STRUCTURES
SCHULZ, M
JOHNSON, NM
APPLIED PHYSICS LETTERS, 1977, 31 (09) : 622 - 625
[24] STUDY OF AVALANCHE PROCESSES IN MOS STRUCTURES.
Plotnikov, A.F.
Shubin, V.E.
Kravchenko, A.B.
Gol'braikh, N.I.
Soviet Microelectronics (English Translation of Mikroelektronika), 1979, 8 (01): : 35 - 40
[25] SURFACE PHOTOVOLTAGE MEASUREMENT IN MOS STRUCTURES.
Pater, K.
Applied physics. A, Solids and surfaces, 1987, A44 (02): : 191 - 194
[26] Analysis of silicon dioxide interface transition region in MOS structures
Markov, S.
Barin, N.
Fiegna, C.
Roy, S.
Sangiorgi, E.
Asenov, A.
SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007, 2007, : 149 - +
[27] PHOTOEMISSION OF ELECTRONS FROM N-TYPE DEGENERATE SILICON INTO SILICON DIOXIDE
GOODMAN, AM
PHYSICAL REVIEW, 1966, 152 (02): : 785 - +
[28] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE . EFFECTS OF ION MIGRATION IN OXIDE
WILLIAMS, R
JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1491 - &
[29] PHOTOEMISSION OF ELECTRONS AND HOLES INTO SILICON NITRIDE
GOODMAN, AM
APPLIED PHYSICS LETTERS, 1968, 13 (08) : 275 - &
[30] INTERFACE STATES AND 1/F NOISE IN SILICON MOS TRANSISTORS
LEUENBER.F
ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND PHYSIK, 1969, 20 (04): : 589 - &

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