共 50 条
- [41] INFLUENCE OF AN ELECTRIC FIELD ON THE ACCUMULATION OF RADIATION DEFECTS IN GALLIUM ARSENIDE. 1982, V 16 (N 5): : 586 - 587
- [42] CAPTURE OF HOLES BY CHROMIUM IMPURITY CENTER IN SEMIINSULATING GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1980, 14 (07): : 788 - 790
- [43] On a nickel arsenide. COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES, 1900, 130 : 914 - 915
- [45] CERTAIN CHARACTERISTICS OF THE CHARGED STATE OF OXYGEN IN HIGH RESISTANCE GALLIUM ARSENIDE. Moscow University Physics Bulletin (English Translation of Vestnik Moskovskogo Universiteta, Fizik, 1986, 41 (06): : 105 - 108
- [46] SECOND HARMONIC GENERATION DURING LASER ANNEALING OF THE SURFACE OF GALLIUM ARSENIDE. Soviet journal of quantum electronics, 1983, 13 (06): : 687 - 688
- [47] FORMATION OF CENTERS WITH DEEP LEVELS IN GASEOUS PHASE EPITAXY OF GALLIUM ARSENIDE. Soviet physics journal, 1986, 29 (05): : 339 - 347
- [49] EVAPORATION OF ATOMS FROM FEMTOSECOND LASER-HEATED GALLIUM ARSENIDE. Applied Physics A: Solids and Surfaces, 1986, A39 (01): : 9 - 11
- [50] NATURE OF RECOMBINATION INSTABILITY OF THE ELECTRIC CURRENT IN CHROMIUM-COMPENSATED GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 9 (06): : 693 - 696