CORRELATIONS OF PHOTOLUMINESCENCE WITH DEFECT DENSITIES IN SEMI-INSULATING GALLIUM ARSENIDE.

被引：0

作者：

Hovel, Harold J. ^{[1
]}

Guidotti, D. ^{[1
]}

机构：

[1] IBM, Thomas J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM, Thomas J. Watson Research Cent, Yorktown Heights, NY, USA

来源：

IEEE Transactions on Electron Devices | 1985年 / ED-32卷 / 11期

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摘要：

引用

页码：2331 / 2338

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[1] CORRELATIONS OF PHOTOLUMINESCENCE WITH DEFECT DENSITIES IN SEMI-INSULATING GALLIUM-ARSENIDE
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[2] PHOTOCONDUCTIVITY IN SEMI-INSULATING GALLIUM ARSENIDE
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