CORRELATIONS OF PHOTOLUMINESCENCE WITH DEFECT DENSITIES IN SEMI-INSULATING GALLIUM ARSENIDE.

被引：0
|
作者：
Hovel, Harold J. [1 ]
Guidotti, D. [1 ]
机构：
[1] IBM, Thomas J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM, Thomas J. Watson Research Cent, Yorktown Heights, NY, USA
来源：
IEEE Transactions on Electron Devices | 1985年 / ED-32卷 / 11期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
20
引用
收藏
页码：2331 / 2338
相关论文
共 50 条
  • [41] The barrier height measurement at the boundary of metal - Semi-insulating gallium arsenide
    Ayzenshtat, G. I.
    Lelekov, M. A.
    Tolbanov, O. P.
    SIBCON-2007: IEEE INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATION, 2007, : 211 - +
  • [42] Effects of silicon negative ion implantation in semi-insulating gallium arsenide
    Yadav, Ajay
    Dubey, S. K.
    Bambole, V.
    Dubey, R. L.
    Sulania, I.
    Kanjilal, D.
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2019, 174 (7-8): : 636 - 646
  • [43] ANALYSIS OF MIXED CONDUCTION EFFECTS IN SEMI-INSULATING GALLIUM-ARSENIDE
    WINTER, JJ
    LEUPOLD, HA
    ROSS, RL
    BALLATO, A
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5176 - 5182
  • [44] Growth and properties of very large crystals of semi-insulating gallium arsenide
    Ware, RM
    Higgins, W
    OHearn, K
    Tiernan, M
    GAAS IC SYMPOSIUM - 18TH ANNUAL, TECHNICAL DIGEST 1996, 1996, : 54 - 57
  • [45] Electron microscope analysis of thermally annealed semi-insulating gallium arsenide
    Sinha, M.P.
    Ganu, G.M.
    Microelectronics Journal, 1989, 20 (05) : 13 - 15
  • [46] Characteristics of nuclear radiation detectors based on semi-insulating gallium arsenide
    Verbitskaya, EM
    Eremin, VK
    Ivanov, AM
    Strokan, NB
    Vasil'ev, VI
    Gavrin, VN
    Veretenkin, EP
    Kozlova, YP
    Kulikov, VB
    Markov, AV
    Polyakov, AY
    SEMICONDUCTORS, 2004, 38 (04) : 472 - 479
  • [47] NON-EXTRINSIC CONDUCTION IN SEMI-INSULATING GALLIUM-ARSENIDE
    ASHBY, A
    ROBERTS, GG
    ASHEN, DJ
    MULLIN, JB
    SOLID STATE COMMUNICATIONS, 1976, 20 (01) : 61 - 63
  • [48] THE INTERPRETATION OF OHMIC BEHAVIOR IN SEMI-INSULATING GALLIUM-ARSENIDE SYSTEMS
    MANIFACIER, JC
    HENISCH, HK
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5195 - 5201
  • [49] NATIVE POINT-DEFECT EQUILIBRIA IN SEMI-INSULATING AND DONOR-DOPED OR IMPLANTED GALLIUM-ARSENIDE
    HURLE, DTJ
    SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 11 - 19
  • [50] The cell structures in the large diameter semi-insulating gallium arsenide single crystal
    Sun, Weizhong
    Hao, Qiuyan
    Wang, Haiyun
    Liu, Caichi
    Xu, Yuesheng
    Shi, Yiqing
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (1-3) : 399 - 402
12345