CORRELATIONS OF PHOTOLUMINESCENCE WITH DEFECT DENSITIES IN SEMI-INSULATING GALLIUM ARSENIDE.

被引：0
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作者：
Hovel, Harold J. [1 ]
Guidotti, D. [1 ]
机构：
[1] IBM, Thomas J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM, Thomas J. Watson Research Cent, Yorktown Heights, NY, USA
来源：
IEEE Transactions on Electron Devices | 1985年 / ED-32卷 / 11期
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摘要：
20
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页码：2331 / 2338
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