FASTER AND SMALLER WITH GALLIUM ARSENIDE.

被引:0
|
作者
Grad, Paul
机构
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:16 / 18
相关论文
共 50 条
  • [21] HYDROGEN PASSIVATION OF GRAIN BOUNDARIES IN POLYCRYSTALLINE GALLIUM ARSENIDE.
    Pearton, S.J.
    Tavendale, A.J.
    1600, (54):
  • [22] Structural Inhomogeneities of Anodic Oxide Films on Gallium Arsenide.
    Sorokin, I.N.
    Nosikov, S.V.
    Gat'ko, L.E.
    Klebanova, N.A.
    Kandidova, L.A.
    Neorganiceskie materialy, 1981, 17 (05): : 769 - 774
  • [23] BROADBAND MONOLITHIC INTEGRATED POWER AMPLIFIERS IN GALLIUM ARSENIDE.
    Driver, Michael C.
    Eldridge, Graeme W.
    Degenford, James E.
    Microwave journal, 1982, 25 (11): : 87 - 94
  • [24] LASER ANNEALING OF POINT DEFECTS IN SILICON AND GALLIUM ARSENIDE.
    Kachurin, G.A.
    Nidaev, E.V.
    Soviet physics. Semiconductors, 1980, 14 (03): : 251 - 252
  • [25] INFLUENCE OF IMPURITIES ON THE ENERGY OF STACKING FAULTS IN GALLIUM ARSENIDE.
    Astakhov, V.M.
    Vadil'eva, L.F.
    Sidorov, Yu.G.
    Stenin, S.I.
    Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1980, 22 (02): : 279 - 282
  • [26] INTERACTION OF RADIATION DEFECTS WITH COPPER ATOMS IN GALLIUM ARSENIDE.
    Vovnenko, V.I.
    Glinchuk, K.D.
    Lukat, K.
    Soviet physics. Semiconductors, 1982, 16 (08): : 936 - 937
  • [27] PHOTON TRANSFER OF EXCITATION OF NONEQUILIBRIUM CARRIERS IN GALLIUM ARSENIDE.
    Epifanov, M.S.
    Galkin, G.N.
    Bobrova, E.A.
    Vavilov, V.S.
    Sabanova, L.D.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (05): : 526 - 529
  • [28] PROPERTIES OF IRON-DOPED SEMIINSULATING GALLIUM ARSENIDE.
    Fistul', V.I.
    Pervova, L.Ya.
    Omel'yanovskii, E.M.
    Rashevskaya, E.P.
    Solov'ev, N.N.
    Pelevin, O.V.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 311 - 316
  • [29] SOME PROPERTIES OF CHROMIUM-DOPED GALLIUM ARSENIDE.
    Brodovoi, V.A.
    Derikot, N.Z.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 7 (07): : 958 - 959
  • [30] ROLE OF THE THERMOCHEMICAL EFFECT IN LASER BEAM EROSION OF GALLIUM ARSENIDE.
    Libenson, M.N.
    Oksman, Ya.A.
    Semenov, A.A.
    Soviet physics. Technical physics, 1981, 26 (07): : 842 - 846