共 50 条
- [43] INVESTIGATION OF EPITAXIAL SILICON LAYERS GROWN IN PRESENCE OF SMALL QUANTITIES OF GOLD PHILOSOPHICAL MAGAZINE, 1967, 16 (141): : 565 - &
- [44] Optical investigation of cubic SiC layers grown on hexagonal SiC substrates by CVD and VLS SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 403 - +
- [46] TEM/HREM analysis of defects in GaN epitaxial layers grown by MOVPE on SiC and sapphire GALLIUM NITRIDE AND RELATED MATERIALS II, 1997, 468 : 287 - 292
- [48] Structural and electrical properties of unintentionally doped 4H-SiC epitaxial layers—Grown by hot-wall CVD Journal of Electronic Materials, 2001, 30 : 207 - 211