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- [5] Investigation of in-grown dislocations in 4H-SiC epitaxial layers SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 147 - +
- [6] Investigation of 3C-SiC epitaxial layers grown by sublimation epitaxy SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 221 - 224
- [7] Domain occurrence in SiC epitaxial layers grown by sublimation SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 151 - 154
- [8] SiC epitaxial layers grown by chemical vapor deposition EXTENDED ABSTRACTS 2008 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY, 2008, : 210 - 212