共 50 条
- [31] Automorphogenesis and gravitropism of plant seedlings grown under microgravity conditions SPACE LIFE SCIENCES: GRAVITY PERCEPTION AND TRANSDUCTION IN PLAN TS, FUNGI AND UNICELLULAR ORGANISMS, 2001, 27 (05): : 933 - 940
- [33] Silicon carbide epitaxial layers grown on SiC wafers with reduced micropipe density WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 131 - 136
- [34] Reaction of molecular beam epitaxial grown AIN nucleation layers with SiC substrates JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (03): : 1500 - 1504
- [35] Domain misorientation in sublimation grown 4H SiC epitaxial layers MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 168 - 171
- [36] Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique Technical Physics Letters, 2013, 39 : 488 - 491
- [38] Structural features of Ge(Ga) single crystals grown under conditions simulating the microgravity perturbation factors Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 6, 2005, 2 (06): : 1902 - 1906
- [39] Structural Characterization of GaN Epitaxial Layers grown on 4H-SiC Substrates with Different Off-cut SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 939 - 942