MORPHOLOGY OF SIC EPITAXIAL LAYERS GROWN BY TEMPERATURE-GRADIENT ZONE-MELTING .1. DEPENDENCE OF THE CRYSTALLIZATION BOUNDARY SMOOTHNESS ON THE EPITAXIAL LAYERS GROWTH-CONDITIONS

被引：1

作者：

PEEV, NS ^{[1
]}

TAIROV, YM ^{[1
]}

SMIRNOVA, NA ^{[1
]}

KALNIN, AA ^{[1
]}

机构：

[1] LENINGRAD ELECT TECH INST,DEPT DIELECT & SEMICOND,LENINGRAD 197022,USSR

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1987年 / 22卷 / 06期

关键词：

D O I：

10.1002/crat.2170220607

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：783 / 787

页数：5

共 24 条

[1] MORPHOLOGY OF SIC EPITAXIAL LAYERS GROWN BY TEMPERATURE-GRADIENT ZONE-MELTING .2. THE DEPENDENCE OF THE STRUCTURAL-PROPERTIES OF THE EPITAXIAL LAYERS ON THE GROWTH-CONDITIONS
PEEV, NS
CRYSTAL RESEARCH AND TECHNOLOGY, 1987, 22 (07) : 877 - 882
[2] MORPHOLOGY OF SIC EPITAXIAL LAYERS GROWN BY TEMPERATURE-GRADIENT ZONE-MELTING .3. POLYTYPICAL NONUNIFORMITY
PEEV, NS
CRYSTAL RESEARCH AND TECHNOLOGY, 1987, 22 (06) : K109 - K111
[3] EPITAXIAL-GROWTH OF GALLIUM-PHOSPHIDE BY TEMPERATURE-GRADIENT ZONE-MELTING
LOZOVSKII, VN
MAREV, VB
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1974, (07): : 115 - 118
[4] PERFECTION OF EPITAXIAL LAYERS OF GALLIUM-ARSENIDE GROWN IN A TEMPERATURE-GRADIENT FIELD
GAPONENKO, VN
LUNIN, LS
LUNINA, OD
RATUSHNYI, VI
INORGANIC MATERIALS, 1985, 21 (11) : 1600 - 1603
[5] CORRELATION BETWEEN TIN CONCENTRATION IN SOLID AND LIQUID-PHASE DURING FORMATION OF EPITAXIAL LAYERS OF PB1-ZSNZTE BY ZONE-MELTING WITH TEMPERATURE-GRADIENT
KRAPUKHIN, VV
SOKOLOV, IA
TSVEIBAK, IY
ZHURNAL FIZICHESKOI KHIMII, 1980, 54 (03): : 625 - 627
[6] EFFECTS OF GROWTH-CONDITIONS ON THE COMPOSITION OF CVT AND PVT GROWN HG1-XCDXTE EPITAXIAL LAYERS
SHA, YG
WIEDEMEIER, H
JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (06) : 613 - 617
[7] THE DEPENDENCE OF SURFACE-MORPHOLOGY OF GASB-EPITAXIAL AND ALXGA1-XSB-EPITAXIAL LAYERS ON THE CONDITIONS OF LPE GROWTH
YORDANOVA, IM
PRAMATAROVA, LD
CRYSTAL RESEARCH AND TECHNOLOGY, 1983, 18 (06) : 835 - 841
[8] INFLUENCE OF GROWTH-CONDITIONS ON PERFECTION OF THICK EPITAXIAL LAYERS OF ALXGA1-XAS
LOZOVSKII, VN
MARONCHUK, IE
LUNIN, LS
BUDDO, VI
SUSHKO, BI
LATUTA, VZ
INORGANIC MATERIALS, 1979, 15 (11) : 1504 - 1508
[9] LPE GROWTH-CONDITIONS FOR CD1-XMNXTE AND HG1-XMNXTE EPITAXIAL LAYERS
BECLA, P
WOLFF, PA
AGGARWAL, RL
YUEN, SY
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 116 - 118
[10] LIQUID-PHASE EPITAXY OF SIC IN THE SYSTEM TB-SI-SIC BY TEMPERATURE-GRADIENT ZONE MELTING(III) - EPITAXIAL LAYER PROPERTIES
PEEV, NS
TAIROV, YM
SMIRNOVA, NA
KALNIN, AA
CRYSTAL RESEARCH AND TECHNOLOGY, 1987, 22 (01) : 59 - 64

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