共 50 条
- [1] EFFECT OF N-2 ADDITION ON ALUMINUM-ALLOY ETCHING BY ELECTRON-CYCLOTRON-RESONANCE REACTIVE ION ETCHING AND MAGNETICALLY ENHANCED REACTIVE ION ETCHING JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (4B): : 2147 - 2151
- [2] Mechanism of reactive ion etching lag for aluminum alloy etching Sato, Tetsuo, 1600, JJAP, Minato-ku, Japan (34):
- [3] COMPARISON OF DAMAGE IN THE DRY ETCHING OF GAAS BY CONVENTIONAL REACTIVE ION ETCHING AND BY REACTIVE ION ETCHING WITH AN ELECTRON-CYCLOTRON RESONANCE GENERATED PLASMA JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1462 - 1466
- [4] MECHANISM OF REACTIVE ION ETCHING LAG FOR ALUMINUM-ALLOY ETCHING JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (4B): : 2142 - 2146
- [6] Mechanism of reactive ion etching lag in WSi2 etching using electron cyclotron resonance plasma Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (4 B): : 2170 - 2174
- [7] REACTIVE ION ETCHING LAG INVESTIGATION OF OXIDE ETCHING IN FLUOROCARBON ELECTRON-CYCLOTRON-RESONANCE PLASMAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1957 - 1961
- [8] Effects of bias frequency on reactive ion etching lag in an electron cyclotron resonance plasma etching system JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (03): : 664 - 667
- [10] MECHANISM OF REACTIVE ION ETCHING LAG IN WSI2 ETCHING USING ELECTRON-CYCLOTRON-RESONANCE PLASMA JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4B): : 2170 - 2174