Effect of N2 addition on aluminum alloy etching by electron cyclotron resonance reactive ion etching and magnetically enhanced reactive ion etching

被引:0
|
作者
Kusumi, Yoshihiro [1 ]
Fujiwara, Nobuo [1 ]
Matsumoto, Junko [1 ]
Yoneda, Masahiro [1 ]
机构
[1] Mitsubishi Electric Corp, Hyogo, Japan
关键词
Reactive ion etching;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:2147 / 2151
相关论文
共 50 条
  • [31] EFFECTS OF ETCH CHEMISTRY ON SF6-BASED TUNGSTEN ETCHING BY ELECTRON-CYCLOTRON-RESONANCE REACTIVE ION ETCHING
    EDDY, CR
    KOSAKOWSKI, J
    SHIREY, LM
    DOBISZ, EA
    RHEE, KW
    CHU, W
    FOSTER, KW
    MARRIAN, CRK
    PECKERAR, MC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06): : 3351 - 3355
  • [32] EFFECTS OF MIXING N2 IN CCL4 ON ALUMINUM REACTIVE ION ETCHING.
    SATO, MASAAKI
    NAKAMURA, HIROAKI
    1982, V 129 (N 11): : 2522 - 2527
  • [33] PREFERENTIAL LATERAL CHEMICAL ETCHING IN REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS
    SCHAIBLE, PM
    SCHWARTZ, GC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 377 - 380
  • [34] AFTER CORROSION TREATMENTS IN ALUMINUM-ALLOY REACTIVE ION ETCHING
    TSUKADA, T
    TAKEI, H
    WANI, E
    UKAI, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C85 - C85
  • [35] REACTIVE ION ETCHING.
    Gorowitz, Bernard
    Saia, Richard J.
    VLSI Electronics, Microstructure Science, 1984, 8 : 297 - 339
  • [36] REACTIVE ION ETCHING AND PLASMA-ETCHING OF TUNGSTEN
    VERDONCK, P
    BRASSEUR, G
    SWART, J
    MICROELECTRONIC ENGINEERING, 1993, 21 (1-4) : 329 - 332
  • [37] REACTIVE ION ETCHING OF DIAMOND
    SANDHU, GS
    CHU, WK
    APPLIED PHYSICS LETTERS, 1989, 55 (05) : 437 - 438
  • [38] REACTIVE ION ETCHING WITH THE FLUOROCHLOROMETHANES
    HO, YS
    BOBBIO, SM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C311 - C311
  • [39] Study on anisotropic etching in reactive ion etching of PMMA
    Huang, Long-Wang
    Yang, Chun-Sheng
    Ding, Gui-Fu
    Weixi Jiagong Jishu/Microfabrication Technology, 2002, (04):
  • [40] REACTIVE-ION ETCHING
    OEHRLEIN, GS
    PHYSICS TODAY, 1986, 39 (10) : 26 - 33