REACTIVE ION ETCHING LAG INVESTIGATION OF OXIDE ETCHING IN FLUOROCARBON ELECTRON-CYCLOTRON-RESONANCE PLASMAS

被引：30
|
作者：
JOUBERT, O
OEHRLEIN, GS
SURENDRA, M
ZHANG, Y
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1994年 / 12卷 / 04期
关键词：
D O I：
10.1116/1.578989
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Recent selective oxide etching results obtained with an electron cyclotron resonance high-density plasma reactor are presented. Reactive ion etching lag results of patterned SiO2 Samples etched with various fluorocarbon gases are discussed. A reactive ion etching lag mechanism which is based on die dependence of the oxide etch rate on rf power is proposed.
引用
收藏
页码：1957 / 1961
页数：5
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