REACTIVE ION ETCHING LAG INVESTIGATION OF OXIDE ETCHING IN FLUOROCARBON ELECTRON-CYCLOTRON-RESONANCE PLASMAS

被引：30

作者：

JOUBERT, O

OEHRLEIN, GS

SURENDRA, M

ZHANG, Y

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1994年 / 12卷 / 04期

关键词：

D O I：

10.1116/1.578989

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Recent selective oxide etching results obtained with an electron cyclotron resonance high-density plasma reactor are presented. Reactive ion etching lag results of patterned SiO2 Samples etched with various fluorocarbon gases are discussed. A reactive ion etching lag mechanism which is based on die dependence of the oxide etch rate on rf power is proposed.

引用

页码：1957 / 1961

页数：5

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