Low-temperature growth of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium

被引：0

作者：

Ro, Jeong-Rae ^{[1
]}

Park, Seong-Ju ^{[1
]}

Kim, Sung-Bock ^{[1
]}

Lee, El-Hang ^{[1
]}

机构：

[1] Electronics and Telecommunications, Research Inst, Taejon, Korea, Republic of

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 2 B期

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摘要：

引用

页码：1135 / 1137

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