Low-temperature growth of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium

被引：0
|
作者：
Ro, Jeong-Rae [1 ]
Park, Seong-Ju [1 ]
Kim, Sung-Bock [1 ]
Lee, El-Hang [1 ]
机构：
[1] Electronics and Telecommunications, Research Inst, Taejon, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 2 B期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
11
引用
收藏
页码：1135 / 1137
相关论文
共 50 条
  • [41] Low-temperature growth of self-assembled InAs dots on GaAs by molecular beam epitaxy
    Zhan, HH
    Nötzel, R
    Hamhuis, GJ
    Eijkemans, TJ
    Wolter, JH
    JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 135 - 139
  • [42] APPLICATIONS OF GAAS GROWN AT A LOW-TEMPERATURE BY MOLECULAR-BEAM EPITAXY
    MISHRA, UK
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 22 (01): : 72 - 77
  • [43] Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs
    V. V. Preobrazhenskii
    M. A. Putyato
    B. R. Semyagin
    Semiconductors, 2002, 36 : 837 - 840
  • [44] Nonequilibrium carriers in GaAs grown by low-temperature molecular beam epitaxy
    Ruda, H
    Shik, A
    PHYSICAL REVIEW B, 2001, 63 (08)
  • [45] Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs
    Preobrazhenskii, VV
    Putyato, MA
    Semyagin, BR
    SEMICONDUCTORS, 2002, 36 (08) : 837 - 840
  • [46] LOW-TEMPERATURE FORMATION OF METAL MOLECULAR-BEAM EPITAXY-GAAS(100) INTERFACES - APPROACHING IDEAL CHEMICAL AND ELECTRONIC LIMITS
    VITURRO, RE
    CHANG, S
    SHAW, JL
    MAILHIOT, C
    BRILLSON, LJ
    TERRASI, A
    HWU, Y
    MARGARITONDO, G
    KIRCHNER, PD
    WOODALL, JM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 1007 - 1012
  • [47] SURFACE CHEMICAL PROCESSES IN METAL ORGANIC MOLECULAR-BEAM EPITAXY - GA DEPOSITION FROM TRIETHYLGALLIUM ON GAAS(100)
    MURRELL, AJ
    WEE, ATS
    FAIRBROTHER, DH
    SINGH, NK
    FOORD, JS
    DAVIES, GJ
    ANDREWS, DA
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) : 4053 - 4063
  • [48] Low temperature selective growth of GaAs quantum wires by modulated flux chemical beam epitaxy
    Ro, JR
    Kim, SB
    Lee, EH
    Lee, HT
    Park, SJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (03): : 1340 - 1344
  • [49] Low-temperature growth of GaAs by organometallic vapor phase epitaxy using TEGa and TBAs
    Osaka Univ., Yamadaoka, Suita, 565-0871
    不详
    不详
    Zairyo, 2007, 9 (880-885): : 880 - 885
  • [50] LOW-TEMPERATURE EPITAXY OF GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    CHEN, WK
    CHANG, CS
    CHEN, WC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (8A): : L1052 - L1055
12345