Low-temperature growth of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium

被引:0
|
作者
Ro, Jeong-Rae [1 ]
Park, Seong-Ju [1 ]
Kim, Sung-Bock [1 ]
Lee, El-Hang [1 ]
机构
[1] Electronics and Telecommunications, Research Inst, Taejon, Korea, Republic of
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 2 B期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
11
引用
收藏
页码:1135 / 1137
相关论文
共 50 条
  • [31] LOW-TEMPERATURE GROWTH OF ALAS/GAAS HETEROSTRUCTURES BY MODULATED MOLECULAR-BEAM EPITAXY
    BRIONES, F
    GONZALEZ, L
    RECIO, M
    VAZQUEZ, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1125 - L1127
  • [32] LOW-TEMPERATURE LIMITS TO MOLECULAR-BEAM EPITAXY OF GAAS
    MIRIN, RP
    IBBETSON, JP
    MISHRA, UK
    GOSSARD, AC
    APPLIED PHYSICS LETTERS, 1994, 65 (18) : 2335 - 2337
  • [33] METALORGANIC MOLECULAR-BEAM EPITAXY GROWTH-CHARACTERISTICS OF GAAS USING TRIETHYLGALLIUM AND TRISDIMETHYLAMINOARSENIC
    LIU, XF
    ASAHI, H
    INOUE, K
    MARX, D
    ASAMI, K
    MIKI, K
    GONDA, S
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (05) : 1952 - 1958
  • [34] METALORGANIC MOLECULAR-BEAM EPITAXY OF CUBIC GAN ON (100)GAAS SUBSTRATES USING TRIETHYLGALLIUM AND MONOMETHYLHYDRAZINE
    TSUCHIYA, H
    TAKEUCHI, A
    KURIHARA, M
    HASEGAWA, F
    JOURNAL OF CRYSTAL GROWTH, 1995, 152 (1-2) : 21 - 27
  • [35] Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy
    Liu, Linsheng
    Chen, Ruolin
    Kong, Chongtao
    Deng, Zhen
    Liu, Guipeng
    Yan, Jianfeng
    Qin, Le
    Du, Hao
    Song, Shuxiang
    Zhang, Xinhui
    Wang, Wenxin
    MATERIALS, 2024, 17 (04)
  • [36] LOW-TEMPERATURE (490 DEGREES-C)GAAS EPITAXIAL-GROWTH ON (100)SI BY MOLECULAR-BEAM EPITAXY
    CHIANG, TY
    YIIN, DH
    LIU, EH
    YEW, TR
    APPLIED PHYSICS LETTERS, 1993, 62 (09) : 985 - 987
  • [37] Metalorganic vapor phase epitaxy of InAs layers on GaAs substrates using low-temperature growth of InGaAs graded buffer layers
    Takano, Y
    Umezawa, M
    Shirakata, S
    Fuke, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (7B): : L944 - L946
  • [38] Metalorganic vapor phase epitaxy of InAs layers on GaAs substrates using low-temperature growth of InGaAs graded buffer layers
    Takano, Y. (teytaka@ipc.shizuoka.ac.jp), 1600, Japan Society of Applied Physics (43):
  • [39] LOW-TEMPERATURE GAAS EPITAXIAL-GROWTH ON SI(100) BY MOLECULAR-BEAM EPITAXY AND THE POSTGROWTH RAPID THERMAL ANNEALING
    CHIANG, TY
    LIU, EH
    YEW, TR
    JOURNAL OF CRYSTAL GROWTH, 1994, 135 (3-4) : 469 - 475
  • [40] Molecular beam epitaxy growth of GaAs buffer at low temperature
    Liang, Jiben
    Kong, Meiying
    Wang, Zhangui
    Zhu, Zhanping
    Duan, Wensin
    Wang, Chunyan
    Zhang, Xueyuan
    Zeng, Yiping
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1993, 14 (12): : 768 - 770