Low-temperature growth of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium

被引：0
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作者：
Ro, Jeong-Rae [1 ]
Park, Seong-Ju [1 ]
Kim, Sung-Bock [1 ]
Lee, El-Hang [1 ]
机构：
[1] Electronics and Telecommunications, Research Inst, Taejon, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 2 B期
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摘要：
11
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页码：1135 / 1137
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