Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

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作者：
机构：
[1] Wan, Wenjian
[2] Yin, Rong
[3] Han, Yingjun
[4] Wang, Feng
[5] Guo, Xuguang
[6] Cao, Juncheng
来源：
Wan, W. (wjwan@mail.sim.ac.cn) | 1600年 / Editorial Office of High Power Laser and Particle Beams, P.O. Box 919-805, Mianyang, 621900, China卷 / 25期
关键词：
Molecular beam epitaxy;
D O I：
10.3788/HPLPB20132506.1523
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