Growth of InGaAs/InAlAs superlattices for strain balanced quantum cascade lasers by molecular beam epitaxy

被引：3

作者：

Lee, Won Jun ^{[1
,2
]}

Sohn, Won Bae ^{[3
]}

Shin, Jae Cheol ^{[4
]}

Han, Il Ki ^{[1
]}

Kim, Tae Geun ^{[2
]}

Kang, JoonHyun ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Nanophoton Res Ctr, Seoul 02792, South Korea

[2] Korea Univ, Sch Elect Engn, 145 Anam ro, Seoul 02841, South Korea

[3] Korea Photon Technol Inst, Opt Lens Mat Res Ctr, Gwangju 61007, South Korea

[4] Dongguk Univ Seoul, Div Elect & Elect Engn, Seoul 04620, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2023年 / 614卷

基金：

新加坡国家研究基金会;

关键词：

A3.Molecular beam epitaxy; Superlattices; B2.Semiconducting III-V materials; B3.Quantum cascade lasers; NARROW-LINEWIDTH; SPECTROSCOPY; TEMPERATURE; GAAS; DEPENDENCE; SYSTEM; SENSOR; WAVE; INP;

D O I：

10.1016/j.jcrysgro.2023.127233

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This study investigated the molecular beam epitaxy (MBE) growth conditions of strain-balanced (SB) In0.669GaAs/In0.362AlAs superlattices (SLs) for SB quantum cascade lasers (QCLs). The growth modes and properties of SB SLs are strongly affected by the growth conditions. The properties of the SB SLs were evaluated using atomic force microscopy (AFM) and high-resolution X-ray diffraction (HRXRD) analysis. Following the establishment of optimized conditions for SB SLs growth, SB QCL were grown. The HRXRD analysis and trans- mission electron microscopy (TEM) measurements showed that the grown samples exhibited abrupt interfaces and good structural quality. An epitaxial wafer was processed into a Fabry-Perot cavity with a ridge structure. The device operated in pulsed mode emitting similar to 4.7 mu m at room temperature with a peak power of 650 mW and a slope efficiency of 870 mW/A.

引用

页数：6

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[1] Growth and characterization of InGaAs/InAlAs quantum cascade lasers
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