Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

被引：0
|
作者：
机构：
[1] Wan, Wenjian
[2] Yin, Rong
[3] Han, Yingjun
[4] Wang, Feng
[5] Guo, Xuguang
[6] Cao, Juncheng
来源：
Wan, W. (wjwan@mail.sim.ac.cn) | 1600年 / Editorial Office of High Power Laser and Particle Beams, P.O. Box 919-805, Mianyang, 621900, China卷 / 25期
关键词：
Molecular beam epitaxy;
D O I：
10.3788/HPLPB20132506.1523
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Ultrafast carrier dynamics and optical nonlinearities of low-temperature-grown InGaAs/InAlAs multiple quantum wells
    Juodawlkis, PW
    McInturff, DT
    Ralph, SE
    APPLIED PHYSICS LETTERS, 1996, 69 (26) : 4062 - 4064
  • [32] Low-temperature molecular beam epitaxy growth and properties of GaGdN nanorods
    Tambo, H.
    Hasegawa, S.
    Kameoka, H.
    Zhou, Y. K.
    Emura, S.
    Asahi, H.
    JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 323 - 325
  • [33] Low-temperature growth of graphene on iron substrate by molecular beam epitaxy
    Zheng, Renjing
    Xu, Zhongguang
    Khanaki, Alireza
    Tian, Hao
    Zuo, Zheng
    Zheng, Jian-Guo
    Liu, Jianlin
    THIN SOLID FILMS, 2017, 627 : 39 - 43
  • [34] LOW-TEMPERATURE GROWTH OF ZNSE BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY
    FUKADA, T
    MATSUMURA, N
    FUKUSHIMA, Y
    SARAIE, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (09): : L1585 - L1587
  • [35] Photoluminescence study of InGaAs/InAlAs single and multiple quantum wells
    Yang, QK
    Chen, JX
    Li, AZ
    JOURNAL OF CRYSTAL GROWTH, 1998, 194 (01) : 31 - 36
  • [36] Photoluminescence study of InGaAs/InAlAs single and multiple quantum wells
    Chinese Acad of Sciences, Shanghai, China
    J Cryst Growth, 1 (31-36):
  • [37] GROWTH BY MOLECULAR-BEAM EPITAXY AND PHOTOLUMINESCENCE OF INGAAS/GAAS QUANTUM-WELLS ON GAAS (111)A SUBSTRATES
    VACCARO, PO
    TAKAHASHI, M
    FUJITA, K
    WATANABE, T
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) : 8037 - 8041
  • [38] Analysis of indium surface segregation in molecular beam epitaxy of InGaAs/GaAs quantum wells
    Yamaguchi, K
    Okada, T
    Hiwatashi, F
    APPLIED SURFACE SCIENCE, 1997, 117 : 700 - 704
  • [39] The optimization of InGaAs/InGaP quantum wells grown by gas source molecular beam epitaxy
    Zhao, Xuyi
    Yu, Wenfu
    Han, Shixian
    Du, Antian
    Lin, Siwei
    Li, Min
    Cao, Chunfang
    Yang, Jin
    Huang, Hua
    Wang, Hailong
    Gong, Qian
    JOURNAL OF CRYSTAL GROWTH, 2021, 572
  • [40] LOW-TEMPERATURE GROWTH OF PBTE AND OF PBTE/PB1-XEUXTE MULTIQUANTUM WELLS BY MOLECULAR-BEAM EPITAXY
    SPRINGHOLZ, G
    BAUER, G
    JOURNAL OF CRYSTAL GROWTH, 1994, 144 (3-4) : 157 - 172
12345