Impact of encroaching length and taper on double gate tunnel FET performance using TCAD simulations

被引：0
|
作者：
Sugi, S.Shinly Swarna [1 ]
Nagarajan, K.K. [2 ]
Srinivasan, R. [1 ]
机构：
[1] IT Department, SSN College of Engineering, Chennai, India
[2] MCA Department, SSN College of Engineering, Chennai, India
来源：
Proceedings of IEEE International Conference on Circuit, Power and Computing Technologies, ICCPCT 2013 | 2013年
关键词：
10;
D O I：
10.1109/ICCPCT.2013.6528880
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：942 / 947
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