共 50 条
- [33] Characterization of Si-SiO2 interface states: comparison between different charge pumping and capacitance techniques Journal of Applied Physics, 1993, 74 (06):
- [34] Contributions and limits of charge pumping measurement for addressing trap generation in High-K/SiO2 dielectric stacks 2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, : 341 - +
- [36] Boron induced charge traps near the interface of Si/SiO2 probed by second harmonic generation PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2010, 247 (08): : 1997 - 2001
- [40] Characterization of Si-SiO2 interface states. Comparison between different charge pumping and capacitance techniques 1600, American Inst of Physics, Woodbury, NY, USA (74):