共 50 条
- [1] Characterization of Si-SiO2 interface states. Comparison between different charge pumping and capacitance techniques 1600, American Inst of Physics, Woodbury, NY, USA (74):
- [2] CHARACTERIZATION OF SI-SIO2 INTERFACE STATES - COMPARISON BETWEEN DIFFERENT CHARGE-PUMPING AND CAPACITANCE TECHNIQUESJOURNAL OF APPLIED PHYSICS, 1993, 74 (06) : 3932 - 3935AUTRAN, JLSEIGNEUR, FPLOSSU, CBALLAND, B
- [3] CHARACTERIZATION OF SI-SIO2 INTERFACE STATES - COMPARISON BETWEEN TRANSIENT CAPACITANCE AND CONDUCTANCE TECHNIQUESJOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 2077 - 2079VUILLAUME, DBOURGOIN, JC
- [4] Si-SiO2 interface charge traps characterization by charge pumping techniqueElectron Technology (Warsaw), 28 (1-2):Jastrzebski, C.Strzalkowski, I.Bakowski, A.
- [5] Charge Pumping and Si-SiO2 Interface Traps Electrical CharacterizationDIELECTRICS FOR NANOSYSTEMS 4: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 2010, 28 (02): : 251 - 261Bauza, D.
- [6] A NEW CHARGE PUMPING METHOD OF MEASURING SI-SIO2 INTERFACE STATESJOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 591 - 599TSENG, WL
- [7] TECHNIQUES FOR IMPROVING THE SI-SIO2 INTERFACE CHARACTERIZATIONJOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5183 - 5198SHER, AHOFFMAN, HJSU, PTSUO, YH
- [8] Comparaison Between Equilibrium Voltage Step and Charge Pumping Techniques for Characterizing Near Si-SiO2 Interface TrapsDIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 2014, 61 (02): : 195 - 202Guenifi, N.Bauza, D.
- [9] CYCLING OF DEFECTS BETWEEN TRAPPED NEGATIVE CHARGE AND INTERFACE STATES AT THE SI-SIO2 INTERFACEAPPLIED PHYSICS LETTERS, 1987, 50 (17) : 1152 - 1154SUNG, JMLYON, SA
- [10] TRANSIENT CAPACITANCE MEASUREMENTS OF INTERFACE STATES ON THE INTENTIONALLY CONTAMINATED SI-SIO2 INTERFACEAPPLIED PHYSICS, 1979, 18 (02): : 169 - 175SCHULZ, MKLAUSMANN, E