Characterization of Si-SiO2 interface states: comparison between different charge pumping and capacitance techniques

被引：0
|
作者：
Autran, J.L.
Seigneur, F.
Plossu, C.
Balland, B.
机构：
来源：
Journal of Applied Physics | 1993年 / 74卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Charge losses in segmented silicon sensors at the Si-SiO2 interface
    Poehlsen, Thomas
    Fretwurst, Eckhart
    Klanner, Robert
    Schuwalow, Sergej
    Schwandt, Joern
    Zhang, Jiaguo
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2013, 700 : 22 - 39
  • [42] ESR CENTERS AND CHARGE DEFECTS NEAR SI-SIO2 INTERFACE
    POINDEXTER, EH
    AHLSTROM, ER
    CAPLAN, PJ
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 456 - 456
  • [43] CALCULATION OF SURFACE-CHARGE NOISE AT THE SI-SIO2 INTERFACE
    GHIBAUDO, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 104 (02): : 917 - 930
  • [44] MORPHOLOGY OF SI-SIO2 INTERFACE
    SUGANO, T
    CHEN, JJ
    HAMANO, T
    SURFACE SCIENCE, 1980, 98 (1-3) : 154 - 166
  • [45] CONTRIBUTIONS OF OXYGEN, SILICON, AND HYDROGEN TO INTERFACE STATES OF AN SI-SIO2 INTERFACE
    FAHRNER, W
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) : 784 - 787
  • [46] POSSIBILITY OF INTRINSIC SI GAP STATES LOCALIZED AT THE SI-SIO2 INTERFACE
    MARTINEZ, E
    YNDURAIN, F
    PHYSICAL REVIEW B, 1982, 25 (10): : 6511 - 6513
  • [47] THE DOPED SI-SIO2 INTERFACE
    SNEL, J
    SOLID-STATE ELECTRONICS, 1981, 24 (02) : 135 - 139
  • [48] THE ROUGHNESS OF THE SI-SIO2 INTERFACE
    HUANG, BZ
    YU, YZ
    HONG, GG
    CHINESE PHYSICS, 1988, 8 (02): : 300 - 307
  • [49] Structure of the Si-SiO2 interface
    Plucinski, KJ
    EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 1999, 3725 : 191 - 195
  • [50] ELECTRONIC STATES AT SI-SIO2 INTERFACE INTRODUCED BY IMPLANTATION OF SI IN THERMAL SIO2
    KALNITSKY, A
    BOOTHROYD, AR
    ELLUL, JP
    POINDEXTER, EH
    CAPLAN, PJ
    SOLID-STATE ELECTRONICS, 1990, 33 (05) : 523 - 530
12345