CALCULATION OF SURFACE-CHARGE NOISE AT THE SI-SIO2 INTERFACE

被引：22

|

作者：

GHIBAUDO, G

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 104卷 / 02期

关键词：

D O I：

10.1002/pssa.2211040247

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：917 / 930

页数：14

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