Charge pumping current from single Si/SiO2 interface traps: Direct observation of Pb centers and fundamental trap-counting by the charge pumping method

被引：0
|
作者：
Interdisciplinary Graduate School of Science and Engineering, Shimane University, Matsue [1 ]
690-8504, Japan
不详 [2 ]
930-8555, Japan
机构：
来源：
Jpn. J. Appl. Phys. | / 4卷
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
04DC01
中图分类号：
学科分类号：
摘要：
Optical pumping
引用
收藏
相关论文
共 50 条
  • [41] POSSIBLE OBSERVATION OF PB0 AND PB1 CENTERS AT IRRADIATED (100)SI/SIO2 INTERFACE FROM ELECTRICAL MEASUREMENTS
    HANEJI, N
    VISHNUBHOTLA, L
    MA, TP
    APPLIED PHYSICS LETTERS, 1991, 59 (26) : 3416 - 3418
  • [42] A General and Reliable Model for Charge Pumping-Part II: Application to the Study of Traps in SiO2 or in High-κ Gate Stacks
    Bauza, Daniel
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (01) : 78 - 84
  • [43] Photon energy threshold for filling boron induced charge traps in SiO2 near the Si/SiO2 interface using second harmonic generation
    Park, Heungman
    Xu, Ying
    Varga, Kalman
    Qi, Jingbo
    Feldman, Leonard C.
    Luepke, Gunter
    Tolk, Norman
    APPLIED PHYSICS LETTERS, 2010, 97 (20)
  • [44] Comparison of interface trap density measured by capacitance/subthreshold/charge-pumping methods for n-MOSFETs with Si-implanted gate-SiO2
    Matsuda, T
    Takezawa, R
    Arakawa, K
    Yasuda, M
    Ohzone, T
    Kameda, E
    ICMTS 2001: PROCEEDINGS OF THE 2001 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 2001, : 65 - 70
  • [45] Interface Traps Analysis in p-Type Poly-Si TFTs Under Hot Carrier Stress Using the Charge Pumping Method
    Kim, Sangsub
    Choi, Pyungho
    Kim, Hyunki
    Kim, Soonkon
    Shin, Junyong
    Lee, Jaeseob
    Kim, Sangsoo
    Choi, Byoungdeog
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, 17 (10) : 7101 - 7106
  • [46] OPTICAL AND ELECTRICAL STUDIES OF INTERFACE TRAPS IN THE SI/SIO2 SYSTEM BY MODIFIED JUNCTION SPACE-CHARGE TECHNIQUES
    GRIMMEISS, HG
    BUCHWALD, WR
    POINDEXTER, EH
    CAPLAN, PJ
    HARMATZ, M
    GERARDI, GJ
    KEEBLE, DJ
    JOHNSON, NM
    PHYSICAL REVIEW B, 1989, 39 (08): : 5175 - 5185
  • [47] Quantitative characterization of Si/SiO2 interface traps induced by energetic ions by means of single ion microprobe and single ion beam induced charge imaging
    Koh, M
    Igarashi, K
    Sugimoto, T
    Matsukawa, T
    Mori, S
    Arimura, T
    Ohdomari, I
    APPLIED SURFACE SCIENCE, 1997, 117 : 171 - 175
  • [48] Investigation of Surface Trap Distribution in LDPE/SiO2 Nanocomposite Based on Simultaneous Observation of Space Charge and Relaxation Current
    Wang, Yalin
    Wu, Jiandong
    Yin, Yi
    IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2016, 23 (06) : 3486 - 3493
  • [49] Investigation of spatial and energetic trap distributions in 1 nm EOT SiO2/HfO2 by discharging-sweep mode amplitude charge pumping
    Chung, Eun-Ae
    Nam, Kab-Jin
    Kim, Young-Pil
    Min, Ji-Young
    Cho, Moonju
    Hong, Hyungseok
    Han, Jeong
    Lee, Jae-Duk
    Shin, Yu-Gyun
    Choi, Siyoung
    Kim, Sangsig
    SOLID STATE SCIENCES, 2011, 13 (06) : 1360 - 1363
  • [50] Interactions between Interface Traps in Electron Capture/Emission Processes: Deviation from Charge Pumping Current Based on the Shockley-Read-Hall Theory
    Tsuchiya, Toshiaki
    APPLIED PHYSICS EXPRESS, 2011, 4 (09)
12345