Power Cycle Reliability of Cu Sintered Die-Bonding Using of Pressure Contact Structure

被引：0
|
作者：
Negishi M. [1 ]
Sugama C. [2 ]
Ishikawa D. [2 ]
Natori M. [2 ]
Kawana Y. [2 ]
Nakako H. [2 ]
机构：
[1] Reseach & Innovation Promotion Headquarters, Advanced Technology Research & Development Center, 7-7 Shinkawasaki, Saiwai-ku, Kanagawa, Kawasaki-shi
[2] Reseach & Innovation Promotion Headquarters, Advanced Technology Research & Development Center, 48 Wadai, Ibaraki, Tsukuba-shi
来源：
Journal of Japan Institute of Electronics Packaging | 2022年 / 25卷 / 03期
关键词：
Bonding Paste; Power Cycle Test; Power Device; Reliability Evaluation; Sintering Cu;
D O I：
10.5104/jiep.JIEP-D-21-00088
中图分类号：
学科分类号：
摘要：
We are conducting the advanced development of a sintering Cu paste (with/without pressure type) for use in power devices. For this report, we carried out a power cycle test and its Weibull analysis using sintering Cu as a bonding material and compared the results to the power cycle lives of Sintering Ag and high-lead solder. The characteristic life for sintering Cu without pressure was about 14 times higher than that of high lead solder when the power cycle condition was T j max = 175°C and ΔT j = 100°C, and about 40 times higher for sintering Cu with pressure. Therefore, the sintering Cu has a superior bonding reliability compared with sintering Ag and high lead solder. Copyright© The Japan Institute of Electronics Packaging.
引用
收藏
页码：218 / 224
页数：6
相关论文
共 50 条
  • [1] Study on die-bonding of single emitter high power laser diodes
    Yue, Yuxin
    Wang, Bin
    Wang, Xiantao
    Wang, Yong
    Xu, Peidong
    Ma, Changyu
    Sheng, Xiting
    OPTICAL ENGINEERING, 2022, 61 (03)
  • [2] Reliability analysis of sintered Cu joints under power cycle condition
    Gao, Yue
    Chen, Chuantong
    Nagao, Shijo
    Suganuma, Katsuaki
    Bahman, Amir Sajjad
    Lannuzzo, Francesco
    ICEPT2019: THE 2019 20TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, 2019,
  • [3] Optimization of die-bonding process using orthogonal array experiments
    Lai, RJ
    Lin, YC
    Kuo, TW
    Chou, SY
    DESIGN 2002: PROCEEDINGS OF THE 7TH INTERNATIONAL DESIGN CONFERENCE, VOLS 1 AND 2, 2002, : 1211 - 1216
  • [4] Reduction of Die-Bonding Interface Thermal Resistance for High-Power LEDs Through Embedding Packaging Structure
    Lei, Xiang
    Zheng, Huai
    Guo, Xing
    Zhang, Zefeng
    Wu, Jiading
    Xu, Chunlin
    Liu, Sheng
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2017, 32 (07) : 5520 - 5526
  • [5] Development of die-bonding film by nano-structure control and mathematical optimization
    Inada, Teiichi
    POLYMER JOURNAL, 2014, 46 (11) : 745 - 750
  • [6] High temperature reliability of pressureless sintered Cu joints for power SiC die attachment
    Dai, J.
    Wang, Y.
    Grant, T.
    Wang, W.
    Mat, M.
    Morshed, M.
    MICROELECTRONICS RELIABILITY, 2023, 150
  • [7] Reduction of Die-bonding Interface Thermal Resistance for High-power LEDs through Embedding Packaging Structure
    Lei, Xiang
    Zheng, Huai
    Guo, Xing
    Liu, Sheng
    2016 15TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM), 2016, : 1058 - 1063
  • [8] Development of die-bonding film by nano-structure control and mathematical optimization
    Teiichi Inada
    Polymer Journal, 2014, 46 : 745 - 750
  • [9] High Strength and Low Thermal Resistance of Die-Bonding Structure for High-Power Light-Emitting Diodes
    Liu, Jiaxin
    Yu, Zikang
    Mou, Yun
    Peng, Yang
    Chen, Mingxiang
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (02) : 711 - 714
  • [10] Die-bonding performance and mechanism based on the sintering of micro Ag paste for high power devices
    Takemasa, Tetsu
    Ueshima, Minoru
    Jiu, Jinting
    Suganuma, Katsuaki
    2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2016, : 377 - 380
12345