Reduction of Die-Bonding Interface Thermal Resistance for High-Power LEDs Through Embedding Packaging Structure

被引:18
|
作者
Lei, Xiang [1 ]
Zheng, Huai [2 ]
Guo, Xing [1 ]
Zhang, Zefeng [1 ]
Wu, Jiading [1 ]
Xu, Chunlin [1 ]
Liu, Sheng [2 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Mech Sci & Engn, Wuhan 430074, Peoples R China
[2] Wuhan Univ, Sch Power & Mech Engn, Cross Disciplinary Inst Engn Sci, Wuhan 430072, Peoples R China
关键词
Boron nitride (BN)/silicone; die-bonding interface; embedding packaging structure; light-emitting diodes (LEDs); thermal resistance; LIGHT-EMITTING-DIODES; LOW-TEMPERATURE; MANAGEMENT; SYSTEM; PERFORMANCE; COMPOSITE; ATTACH; BOARD; CHIP;
D O I
10.1109/TPEL.2016.2609891
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thermal management is a key issue for high-power light-emitting diodes (LEDs). In this study, a novel packaging structure was proposed to reduce the die-bonding interface thermal resistance and provided a new idea for LED heat-dissipation. The LED chip was embedded into a square groove at the lead-frame substrate. The gap between the edges of the LED chip and square groove was filled with boron nitride/silicone composite. So the heat generated from the chip could be dissipated from the side surfaces to the substrate. The experimental results show that the heat-dissipation ability of LEDs has been significantly improved by the new embedding packaging structure. The die-bonding interface thermal resistance can be reduced by more than 20%. The junction temperature rise can be reduced by 14%. Due to the fully embedding of LED chip in the square groove, the light intensity distribution is slightly shrunk and the light output power is slightly reduced by about 8%.
引用
收藏
页码:5520 / 5526
页数:7
相关论文
共 30 条
  • [1] Reduction of Die-bonding Interface Thermal Resistance for High-power LEDs through Embedding Packaging Structure
    Lei, Xiang
    Zheng, Huai
    Guo, Xing
    Liu, Sheng
    2016 15TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM), 2016, : 1058 - 1063
  • [2] High Strength and Low Thermal Resistance of Die-Bonding Structure for High-Power Light-Emitting Diodes
    Liu, Jiaxin
    Yu, Zikang
    Mou, Yun
    Peng, Yang
    Chen, Mingxiang
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (02) : 711 - 714
  • [3] Effect of Chip Die Bonding on Thermal Resistance of High Power LEDs
    Ayodha, Tri
    Han, Hun Sik
    Kim, Joongnyon
    Kim, Seo Young
    2012 13TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM), 2012, : 957 - 961
  • [4] Study on thermal conductive adhesives for high-power LEDs packaging
    School of Mech. Sci. and Engin., Huazhong Uni. of Sci. and Tech., Wuhan 430074, China
    不详
    不详
    Proc. - Int. Symp. Adv. Packag. Mater., (104-108):
  • [5] Thermal resistance calculation method of high-power LEDs
    Ma, Zhiling
    Zheng, Xueren
    AD'07: PROCEEDINGS OF ASIA DISPLAY 2007, VOLS 1 AND 2, 2007, : 1559 - 1561
  • [6] Is the thermal resistance coefficient of high-power LEDs constant?
    Jayasinghe, Lalith
    Dong, Tianming
    Narendran, Nadarajah
    SEVENTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING, 2007, 6669
  • [7] Characterization of thermal resistance coefficient of high-power LEDs
    Jayasinghe, Lalith
    Gu, Yimin
    Narendran, Nadarajah
    SIXTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING, 2006, 6337
  • [8] The Study of Thermal Resistance Deviation of High-Power LEDs
    Ying, Shang-Pin
    Fu, Han-Kuei
    Tang, Wei-Feng
    Hong, Rong-Ci
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (08) : 2843 - 2848
  • [9] Reconstruction and thermal performance analysis of die-bonding filling states for high-power light-emitting diode devices
    Li, Zongtao
    Tang, Yong
    Ding, Xinrui
    Li, Cheng
    Yuan, Dong
    Lu, Yifan
    APPLIED THERMAL ENGINEERING, 2014, 65 (1-2) : 236 - 245
  • [10] Promising composite die-bonding materials for high-power GaN-based LED applications
    Horng, Ray-Hua
    Hong, Jhih-Sin
    Tsai, Yu-Li
    Chen, Chia-Ju
    Chen, Chih-Ming
    Wuu, Dong-Sing
    GALLIUM NITRIDE MATERIALS AND DEVICES V, 2010, 7602