Reduction of Die-Bonding Interface Thermal Resistance for High-Power LEDs Through Embedding Packaging Structure

被引:18
|
作者
Lei, Xiang [1 ]
Zheng, Huai [2 ]
Guo, Xing [1 ]
Zhang, Zefeng [1 ]
Wu, Jiading [1 ]
Xu, Chunlin [1 ]
Liu, Sheng [2 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Mech Sci & Engn, Wuhan 430074, Peoples R China
[2] Wuhan Univ, Sch Power & Mech Engn, Cross Disciplinary Inst Engn Sci, Wuhan 430072, Peoples R China
关键词
Boron nitride (BN)/silicone; die-bonding interface; embedding packaging structure; light-emitting diodes (LEDs); thermal resistance; LIGHT-EMITTING-DIODES; LOW-TEMPERATURE; MANAGEMENT; SYSTEM; PERFORMANCE; COMPOSITE; ATTACH; BOARD; CHIP;
D O I
10.1109/TPEL.2016.2609891
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thermal management is a key issue for high-power light-emitting diodes (LEDs). In this study, a novel packaging structure was proposed to reduce the die-bonding interface thermal resistance and provided a new idea for LED heat-dissipation. The LED chip was embedded into a square groove at the lead-frame substrate. The gap between the edges of the LED chip and square groove was filled with boron nitride/silicone composite. So the heat generated from the chip could be dissipated from the side surfaces to the substrate. The experimental results show that the heat-dissipation ability of LEDs has been significantly improved by the new embedding packaging structure. The die-bonding interface thermal resistance can be reduced by more than 20%. The junction temperature rise can be reduced by 14%. Due to the fully embedding of LED chip in the square groove, the light intensity distribution is slightly shrunk and the light output power is slightly reduced by about 8%.
引用
收藏
页码:5520 / 5526
页数:7
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