Study on uncooled In0.53Ga0.47As/InP infrared detectors

被引:0
|
作者
机构
来源
| 2005年 / Chinese Ceramic Society, Beijing, China卷 / 34期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode
    Yuan Zheng-bing
    Xiao Qing-quan
    Yang Wen-xian
    Xiao Meng
    Wu Yuan-yuan
    Tan Ming
    Dai Pan
    Li Xue-fei
    Xie Quan
    Lu Shu-long
    ACTA PHOTONICA SINICA, 2018, 47 (03)
  • [22] Sensitive In0.53Ga0.47As/InP (SI) magnetic field sensors
    Przeslawski, T
    Wolkenberg, A
    Reginski, K
    Kaniewski, J
    E-MRS 2003 FALL MEETING, SYMPOSIA A AND C, PROCEEDINGS, 2004, 1 (02): : 242 - 246
  • [23] Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells
    Patricio, M. A. Tito
    Tavares, B. G. M.
    Jacobsen, J. M.
    Teodoro, M. D.
    LaPierre, R. R.
    Pusep, Yu. A.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2021, 131
  • [24] Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces
    Alian, Alireza
    Brammertz, Guy
    Merckling, Clement
    Firrincieli, Andrea
    Wang, Wei-E
    Lin, H. C.
    Caymax, Matty
    Meuris, Marc
    De Meyer, Kristin
    Heyns, Marc
    APPLIED PHYSICS LETTERS, 2011, 99 (11)
  • [25] SELECTIVE LPE-GROWTH OF IN0.53GA0.47AS ON SEMIINSULATING INP
    SCHILLING, M
    SCHEMMEL, G
    TEGUDE, FJ
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 259 - 262
  • [26] PHOTOLUMINESCENCE AND LASER-EMISSION IN IN0.53GA0.47AS/INP LAYERS
    KULYUK, LL
    RADAUTSAN, SI
    RUSSU, EV
    SIMINEL, AV
    SMIRNOV, VG
    STRUMBAN, EE
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 96 (01): : 289 - 293
  • [27] GROWTH OF INP, GAAS, AND IN0.53GA0.47AS BY CHEMICAL BEAM EPITAXY
    TSANG, WT
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 666 - 670
  • [28] PERFORMANCE OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES
    FORREST, SR
    SMITH, RG
    KIM, OK
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (12) : 2040 - 2048
  • [29] FABRICATION AND CHARACTERIZATION OF AN IN0.53GA0.47AS/INP PHOTON TRANSPORT TRANSISTOR
    CHU, AK
    GIGASE, Y
    LEE, HY
    HAFICH, MJ
    ROBINSON, G
    VANZEGHBROECK, B
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (04) : 454 - 456
  • [30] Study of N-type Si delta doping on InP and In0.53Ga0.47As
    Yan, J
    Ru, G
    Choa, FS
    APPLICATIONS OF PHOTONIC TECHNOLOGY 6: CLOSING THE GAP BETWEEN THEORY, DEVELOPMENT, AND APPLICATION, 2003, 5260 : 442 - 445