Study of N-type Si delta doping on InP and In0.53Ga0.47As

被引：1
|
作者：
Yan, J [1 ]
Ru, G [1 ]
Choa, FS [1 ]
机构：
[1] Univ Maryland Baltimore Cty, Dept Comp Sci & Elect Engn, Baltimore, MD 21228 USA
来源：
APPLICATIONS OF PHOTONIC TECHNOLOGY 6: CLOSING THE GAP BETWEEN THEORY, DEVELOPMENT, AND APPLICATION | 2003年 / 5260卷
关键词：
delta doping; n-type Si doping; MOCVD growth; InP; InGaAs;
D O I：
10.1117/12.543713
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The method of using Si delta doping to obtain high n-type doping for InP and In0.53Ga0.47As lattice matched to InP was studied. With the multiple delta doping, we can obtain similar to10(19) cm(-3) N-type doping for both the InP and InGaAs materials by using TMI, PH3, Si2H6 and TEGa precursors in Metalorganic Chemical Vapor Deposition (MOCVD) growths. Current result shows that the delta doping technique is critical for getting extremely high N-type doping in InP and InGaAs.
引用
收藏
页码：442 / 445
页数：4
相关论文
共 50 条
  • [1] THE METAL-INSULATOR TRANSITION IN N-TYPE IN0.53GA0.47AS
    MALIEPAARD, MC
    PEPPER, M
    NEWBURY, R
    HILL, G
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (29) : 4805 - 4815
  • [2] Sensitive In0.53Ga0.47As/InP (SI) magnetic field sensors
    Przeslawski, T
    Wolkenberg, A
    Reginski, K
    Kaniewski, J
    E-MRS 2003 FALL MEETING, SYMPOSIA A AND C, PROCEEDINGS, 2004, 1 (02): : 242 - 246
  • [3] DIFFUSION OF CD IN INP AND IN0.53GA0.47AS
    AYTAC, S
    SCHLACHETZKI, A
    JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) : 169 - 173
  • [4] Bandlike and localized states of extended defects in n-type In0.53Ga0.47As
    Hsu, Po-Chun
    Simoen, Eddy
    Merckling, Clement
    Eneman, Geert
    Mols, Yves
    Alian, AliReza
    Langer, Robert
    Collaert, Nadine
    Heyns, Marc
    JOURNAL OF APPLIED PHYSICS, 2018, 124 (16)
  • [5] Study on uncooled In0.53Ga0.47As/InP infrared detectors
    2005, Chinese Ceramic Society, Beijing, China (34):
  • [6] NEARLY IDEAL INP/IN0.53GA0.47AS HETEROJUNCTION REGROWTH ON CHEMICALLY PREPARED IN0.53GA0.47AS SURFACES
    YABLONOVITCH, E
    BHAT, R
    ZAH, CE
    GMITTER, TJ
    KOZA, MA
    APPLIED PHYSICS LETTERS, 1992, 60 (03) : 371 - 373
  • [7] DEEP LEVELS IN IN0.53GA0.47AS/INP HETEROSTRUCTURES
    FORREST, SR
    KIM, OK
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5738 - 5745
  • [8] Spin splitting in In0.53Ga0.47As/InP heterostructures
    Shang Li-Yan
    Yu Guo-Lin
    Lin Tie
    Zhou Wen-Zheng
    Guo Shao-Ling
    Dai Ning
    Chu Jun-Hao
    CHINESE PHYSICS LETTERS, 2008, 25 (06) : 2194 - 2197
  • [9] MAGNETOTRANSPORT IN NARROW IN0.53GA0.47AS/INP WIRES
    MENSCHIG, A
    FORCHEL, A
    ROOS, B
    GERMANN, R
    PRESSEL, K
    HEURING, W
    GRUTZMACHER, D
    APPLIED PHYSICS LETTERS, 1990, 57 (17) : 1757 - 1759
  • [10] FE AND CR DOPING OF LIQUID-PHASE EPITAXIAL IN0.53GA0.47AS/INP
    RAO, MV
    BHATTACHARYA, PK
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 333 - 337
12345