Study of N-type Si delta doping on InP and In0.53Ga0.47As

被引：1
|
作者：
Yan, J [1 ]
Ru, G [1 ]
Choa, FS [1 ]
机构：
[1] Univ Maryland Baltimore Cty, Dept Comp Sci & Elect Engn, Baltimore, MD 21228 USA
来源：
APPLICATIONS OF PHOTONIC TECHNOLOGY 6: CLOSING THE GAP BETWEEN THEORY, DEVELOPMENT, AND APPLICATION | 2003年 / 5260卷
关键词：
delta doping; n-type Si doping; MOCVD growth; InP; InGaAs;
D O I：
10.1117/12.543713
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The method of using Si delta doping to obtain high n-type doping for InP and In0.53Ga0.47As lattice matched to InP was studied. With the multiple delta doping, we can obtain similar to10(19) cm(-3) N-type doping for both the InP and InGaAs materials by using TMI, PH3, Si2H6 and TEGa precursors in Metalorganic Chemical Vapor Deposition (MOCVD) growths. Current result shows that the delta doping technique is critical for getting extremely high N-type doping in InP and InGaAs.
引用
收藏
页码：442 / 445
页数：4
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