Study on uncooled In0.53Ga0.47As/InP infrared detectors

被引：0
|
作者：
机构：
来源：
| 2005年 / Chinese Ceramic Society, Beijing, China卷 / 34期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Phonons in In0.53Ga0.47As/InP(100) superlattices by infrared reflectance -: art. no. 165320
    Rowell, NL
    Yu, G
    Lockwood, DJ
    Poole, PJ
    PHYSICAL REVIEW B, 2003, 68 (16)
  • [42] OPTICAL STUDIES OF IN0.53GA0.47AS
    MARZIN, JY
    BENCHIMOL, JL
    SERMAGE, B
    ETIENNE, B
    VOOS, M
    SOLID STATE COMMUNICATIONS, 1983, 45 (02) : 79 - 82
  • [43] CD DIFFUSION IN IN0.53GA0.47AS
    AMBREE, P
    GRUSKA, B
    CRYSTAL RESEARCH AND TECHNOLOGY, 1989, 24 (03) : 299 - 305
  • [44] MEASUREMENT OF INP IN0.53GA0.47AS AND IN0.53GA0.47AS IN0.52AL0.48AS HETEROJUNCTION BAND OFFSETS BY X-RAY PHOTOEMISSION SPECTROSCOPY
    WALDROP, JR
    KRAUT, EA
    FARLEY, CW
    GRANT, RW
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 372 - 378
  • [45] Highly uniform regrown In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes on In0.53Ga0.47As
    Osaka, J
    Maezawa, K
    Yokoyama, H
    Yamamoto, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (2B): : 1204 - 1207
  • [46] INTERBAND MAGNETOABSORPTION OF IN0.53GA0.47AS
    ALAVI, K
    AGGARWAL, RL
    GROVES, SH
    PHYSICAL REVIEW B, 1980, 21 (03): : 1311 - 1315
  • [47] MBE growth of In0.53Ga0.47Sb on In0.53Ga0.47As/InP substrates using the interfacial misfit dislocation arrays
    Ince, Fatih F.
    Frost, Mega
    Seth, Subhashree
    Shima, Darryl
    Rotter, Thomas J.
    Balakrishnan, Ganesh
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2023, 41 (05):
  • [48] Highly uniform regrown In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes on In0.53Ga0.47As
    Osaka, J
    Maezawa, K
    Yokoyama, H
    Yamamoto, M
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 568 - 570
  • [49] Study on spectral responsivity characteristics for InP/In0.53Ga0.47As/InP p-i-n photodiodes
    Wang, Xiaodong
    Hou, Liwei
    Xie, Wei
    Wang, Bingbing
    Chen, Xiaoyao
    Pan, Ming
    OPTICAL AND QUANTUM ELECTRONICS, 2015, 47 (07) : 1889 - 1900
  • [50] In0.53Ga0.47As/InP（001）薄膜表面重构的研究
    周海月
    赵振
    郭祥
    魏文喆
    王一
    黄梦雅
    罗子江
    丁召
    材料导报, 2015, 29 (18) : 55 - 59+64
12345