Study on uncooled In0.53Ga0.47As/InP infrared detectors

被引:0
|
作者
机构
来源
| 2005年 / Chinese Ceramic Society, Beijing, China卷 / 34期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] In0.53Ga0.47As/InP异质结的深能级
    S·R·Forrest
    屈积建
    半导体光电, 1983, (02) : 65 - 72
  • [32] Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells
    Tito Patricio, M.A.
    Tavares, B.G.M.
    Jacobsen, J.M.
    Teodoro, M.D.
    LaPierre, R.R.
    Pusep, Yu.A.
    Physica E: Low-Dimensional Systems and Nanostructures, 2021, 131
  • [33] IN0.53GA0.47AS/INP QUANTUM WIRES - FABRICATION AND MAGNETOTRANSPORT STUDIES
    MENSCHIG, A
    ROOS, B
    GERMANN, R
    FORCHEL, A
    PRESSEL, K
    HEURING, W
    GRUTZMACHER, D
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 1353 - 1356
  • [34] A RESISTIVE-GATE IN0.53GA0.47AS/INP HETEROSTRUCTURE CCD
    ROSSI, DV
    SONG, JI
    FOSSUM, ER
    KIRCHNER, PD
    PETTIT, GD
    WOODALL, JM
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (12) : 688 - 690
  • [35] HIGH-SENSITIVITY IN0.53GA0.47AS/INP HETEROJUNCTION PHOTOTRANSISTOR
    LEU, LY
    GARDNER, JT
    FORREST, SR
    APPLIED PHYSICS LETTERS, 1990, 57 (12) : 1251 - 1253
  • [36] Raman studies of In0.53Ga0.47As/InP multi quantum wells
    Varandani, D
    Dilawar, N
    Bandyopadhyay, AK
    THIN SOLID FILMS, 2003, 444 (1-2) : 221 - 226
  • [37] PHOTOLUMINESCENCE STUDY OF INTERDIFFUSION IN IN0.53GA0.47AS/INP SURFACE QUANTUM-WELLS
    OSHINOWO, J
    FORCHEL, A
    GRUTZMACHER, D
    STOLLENWERK, M
    HEUKEN, M
    HEIME, K
    APPLIED PHYSICS LETTERS, 1992, 60 (21) : 2660 - 2662
  • [38] GROWTH OF IN0.53GA0.47AS AND INP ON INP SUBSTRATE BY MOLECULAR-BEAM EPITAXY
    LAMBERT, M
    HUET, D
    REVUE DE PHYSIQUE APPLIQUEE, 1983, 18 (12): : 757 - 761
  • [39] Ordering of In and Ga in epitaxially grown In0.53Ga0.47As films on (001)InP substrates
    Shin, Keesam
    Yoo, Junghoon
    Joo, Sungwook
    Mori, Takahiro
    Shindo, Daisuke
    Hanada, Takashi
    Makino, Hisao
    Cho, Meoungwhan
    Yao, Takafumi
    Park, Young-Gil
    MATERIALS TRANSACTIONS, 2006, 47 (04) : 1115 - 1120
  • [40] Electron mobility in In0.53Ga0.47As
    Zoul, Antonin
    Tesla electronics, 1986, 19 (3-4): : 56 - 58