A DESIGN OF 0.25μm CMOS SWITCH

被引：0
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作者：
Han Lei Yang Tao Xie Jun Wang Yong You Yu Zhang Bo Chengdu Goldtel Microelectronics Co Ltd Chengdu China School of Microelectronics and SolidState Electronics University of Electronic Science Technology of China Chengdu China [611731 ,610054 ]
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来源：
Journal of Electronics | 2006年 / 05期
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中图分类号：
TN432 [场效应型];
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摘要：
Single-Pole Double-Throw (SPDT) broadband switch has been designed in a 0.25μm Comple- mentary Metal Oxide Semiconductor (CMOS) process. To optimize the performance of isolation and insertion loss, based on normal design, the effects of Gate Series Resistances (GSR) on insertion loss and switching time are analyzed for the first time. The compatible GSRs are chosen by the analyses. The fabricated chips were tested and the results show the switch isolation from DC (Direct Current) to 1GHz exhibits 55dB and insertion loss lower than 2.1dB.
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页码：745 / 747
页数：3
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