Wide-band 0.25μm CMOS Passive Mixer

被引：0

作者：

Lo, Ivy ^{[1
]}

Wang, Xiaoyue ^{[2
]}

Boric-Lubecke, Olga ^{[1
]}

Hong, Yunpyo ^{[1
]}

Song, Chenyan ^{[1
]}

机构：

[1] Univ Hawaii Manoa, Dept EE, 2540 Dole St, Honolulu, HI 96822 USA

[2] Texas Instruments Inc, San Diego, CA 92121 USA

来源：

RWS: 2009 IEEE RADIO AND WIRELESS SYMPOSIUM | 2009年

关键词：

CMOS passive mixer; wide-band; conversion loss; near-threshold;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a wide-band resistive ring mixer fully integrated in 0.25 mu m CMOS process. This mixer exhibits broadband RF impedance matching with return loss better than -10 dB from 2.2 to 8.3 GHz, and better than -15 dB from 3 to 6.2 GHz. The best conversion loss (CL) of 6.4 dB is achieved at 3.2 GHz. The input P1dB is better than 4 dBm, and the IIP3 is better than 11.4 dBm over the entire RF bandwidth of 2 - 9 GHz. Compared to other published CMOS wide-band resistive mixers, this mixer achieves the best linearity between 2 and 9 GHz. In addition, with a small gate bias a moderate CL is achieved at very low LO power levels.

引用

页码：475 / +

页数：3

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