CHEMICAL PHYSICS OF FLUORINE PLASMA-ETCHED SILICON SURFACES - STUDY OF SURFACE CONTAMINATIONS

被引：30
|
作者：
BRAULT, P [1 ]
RANSON, P [1 ]
ESTRADESZWARCKOPF, H [1 ]
ROUSSEAU, B [1 ]
机构：
[1] CNRS,CTR RECH SOLIDES ORG CRISTALLINE IMPARFAITE,F-45071 ORLEANS 02,FRANCE
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 04期
关键词：
D O I：
10.1063/1.346625
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
F2 plasma-Si(100) surface interaction experiments have been conducted to understand basic mechanisms of surface modifications. Surface analysis has been investigated using x-ray photoelectron spectroscopy and nuclear reaction analysis. The experiments show deep penetration of fluorine into silicon and limitation of etching caused by oxide layers coming from contamination of the plasma by removal of oxygen from alumina walls of the reactor. Biasing of the silicon substrate enhanced carbon contamination.
引用
收藏
页码：1702 / 1709
页数：8
相关论文
共 50 条
  • [41] Importance of fluorine surface diffusion for plasma etching of silicon
    Verdonck, P
    Goodyear, A
    Mansano, RD
    Barroy, PRJ
    Braithwaite, NSJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (03): : 791 - 796
  • [42] Enhanced light trapping in polycrystalline silicon thin-film solar cells using plasma-etched submicron textures
    Huang, Ying
    Sahraei, Nasim
    Widenborg, Per I.
    Peters, Ian Marius
    Dalapati, Goutam Kumar
    Iskander, Aneesa
    Aberle, Armin G.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 122 : 146 - 151
  • [43] Investigation of Ohmic contact to plasma-etched n-Al0.5Ga0.5N by surface treatment
    Zhou, Shenhui
    Ding, Yu
    Zhuang, Zhe
    Sang, Yimeng
    Chen, Kai
    Xu, Feifan
    Yu, Junchi
    Tao, Tao
    Zhi, Ting
    Lu, Hai
    Zhang, Rong
    Liu, Bin
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2024, 39 (06)
  • [44] Interface investigations of hydrogen plasma etched silicon surfaces for heterojunction silicon solar cell applications
    Mueller, Thomas
    Tang, Muzhi
    Ge, Jia
    Wong, Johnson
    2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2015,
  • [45] XPS ANALYSIS OF O2-CF4 AND O2-SF6 PLASMA-ETCHED POLYIMIDE SURFACES
    EMMI, F
    EGITTO, F
    HORWATH, R
    VUKANOVIC, V
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C310 - C310
  • [46] PLASMA-ETCHED POLYCRYSTALLINE HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITED DIAMOND THIN-FILMS AND THEIR ELECTRICAL CHARACTERISTICS
    LIAW, BY
    STACY, T
    ZHAO, G
    CHARLSON, EJ
    CHARLSON, EM
    MEESE, JM
    PRELAS, MA
    APPLIED PHYSICS LETTERS, 1994, 65 (22) : 2827 - 2829
  • [47] Fluorine-related passivation layer on etched Al-Cu (1%) alloy surfaces on silicon after SF6 plasma treatments
    Electronics and Telecommunications, Research Inst, Taejon, Korea, Republic of
    Mater Lett, 3-4 (183-187):
  • [48] A fluorine-related passivation layer on etched Al-Cu (1%) alloy surfaces on silicon after SF6 plasma treatments
    Baek, KH
    Yoon, YS
    Park, JM
    Kwon, KH
    Kim, CI
    Nam, KS
    MATERIALS LETTERS, 1998, 35 (3-4) : 183 - 187
  • [49] Influence of the Chemical Composition and Topography of the Ti6Al7Nb Surface Etched in Fluorine Plasma on Its Selected Properties
    Jedrzejczak, Anna
    Paluch, Mateusz
    Makowka, Marcin
    ADVANCED ENGINEERING MATERIALS, 2023, 25 (19)
  • [50] Improved epitaxial quality following etch damage removal on plasma etched silicon surfaces
    Bonar, JM
    Schiz, J
    Ashburn, P
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, 1997, (157): : 407 - 410
12345