CHEMICAL PHYSICS OF FLUORINE PLASMA-ETCHED SILICON SURFACES - STUDY OF SURFACE CONTAMINATIONS

被引：30

作者：

BRAULT, P ^{[1
]}

RANSON, P ^{[1
]}

ESTRADESZWARCKOPF, H ^{[1
]}

ROUSSEAU, B ^{[1
]}

机构：

[1] CNRS,CTR RECH SOLIDES ORG CRISTALLINE IMPARFAITE,F-45071 ORLEANS 02,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 04期

关键词：

D O I：

10.1063/1.346625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

F2 plasma-Si(100) surface interaction experiments have been conducted to understand basic mechanisms of surface modifications. Surface analysis has been investigated using x-ray photoelectron spectroscopy and nuclear reaction analysis. The experiments show deep penetration of fluorine into silicon and limitation of etching caused by oxide layers coming from contamination of the plasma by removal of oxygen from alumina walls of the reactor. Biasing of the silicon substrate enhanced carbon contamination.

引用

页码：1702 / 1709

页数：8

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