CHEMICAL PHYSICS OF FLUORINE PLASMA-ETCHED SILICON SURFACES - STUDY OF SURFACE CONTAMINATIONS

被引：30
|
作者：
BRAULT, P [1 ]
RANSON, P [1 ]
ESTRADESZWARCKOPF, H [1 ]
ROUSSEAU, B [1 ]
机构：
[1] CNRS,CTR RECH SOLIDES ORG CRISTALLINE IMPARFAITE,F-45071 ORLEANS 02,FRANCE
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 04期
关键词：
D O I：
10.1063/1.346625
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
F2 plasma-Si(100) surface interaction experiments have been conducted to understand basic mechanisms of surface modifications. Surface analysis has been investigated using x-ray photoelectron spectroscopy and nuclear reaction analysis. The experiments show deep penetration of fluorine into silicon and limitation of etching caused by oxide layers coming from contamination of the plasma by removal of oxygen from alumina walls of the reactor. Biasing of the silicon substrate enhanced carbon contamination.
引用
收藏
页码：1702 / 1709
页数：8
相关论文
共 50 条
  • [31] TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF PLASMA-ETCHED SILICON-NITRIDE SILICON-CARBIDE COMPOSITES
    PINK, FX
    OSTREICHER, KJ
    JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1987, 7 (03): : 161 - 166
  • [32] Photoreflectance study of plasma-etched semi-insulating GaAs substrates treated
    Avakyants L.P.
    Bokov P.Yu.
    Grigoriev A.T.
    Chervyakov A.V.
    Bulletin of the Russian Academy of Sciences: Physics, 2008, 72 (7) : 941 - 943
  • [33] Effect of surface roughness on magnetization reversal of Co films on plasma-etched Si(100) substrates
    Li, M.
    Zhao, Y.-P.
    Wang, G.-C.
    Min, H.-G.
    Journal of Applied Physics, 1998, 83 (11 pt 2):
  • [34] Effect of surface roughness on magnetization reversal of Co films on plasma-etched Si(100) substrates
    Li, M
    Zhao, YP
    Wang, GC
    Min, HG
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 6287 - 6289
  • [35] Elimination of Biological Contaminations from Surfaces by Plasma Discharges: Chemical Sputtering
    Rauscher, Hubert
    Kylian, Ondrej
    Benedikt, Jan
    von Keudell, Achim
    Rossi, Francois
    CHEMPHYSCHEM, 2010, 11 (07) : 1382 - 1389
  • [36] Surface roughness in plasma-etched As2S3 films:: Its origin and improvement
    Choi, Duk-Yong
    Madden, Steve
    Rode, Andrei
    Wang, Rongping
    Ankiewicz, Adrian
    Luther-Davies, Barry
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2008, 7 (03) : 285 - 290
  • [37] Effect of surface roughness on magnetic properties of Co films on plasma-etched Si(100) substrates
    Li, M
    Wang, GC
    Min, HG
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) : 5313 - 5320
  • [38] Surface preparation for Schottky metal-4H-SiC contacts formed on plasma-etched SiC
    Morrison, DJ
    Pidduck, AJ
    Moore, V
    Wilding, PJ
    Hilton, KP
    Uren, MJ
    Johnson, CM
    Wright, NG
    O'Neill, AG
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (12) : 1107 - 1114
  • [39] Behavior of fluorine on silicon (100) surfaces etched with NH4F aqueous solutions
    Ikeda, M
    Iwamoto, S
    Nagashima, N
    ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 2000, 83 (07): : 41 - 47
  • [40] Behavior of fluorine on silicon (100) surfaces etched with NH4F aqueous solutions
    Ikeda, Masanori
    Iwamoto, Sachiya
    Nagashima, Naoyuki
    Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 2000, 83 (07): : 41 - 47
12345