CHEMICAL PHYSICS OF FLUORINE PLASMA-ETCHED SILICON SURFACES - STUDY OF SURFACE CONTAMINATIONS

被引：30

作者：

BRAULT, P ^{[1
]}

RANSON, P ^{[1
]}

ESTRADESZWARCKOPF, H ^{[1
]}

ROUSSEAU, B ^{[1
]}

机构：

[1] CNRS,CTR RECH SOLIDES ORG CRISTALLINE IMPARFAITE,F-45071 ORLEANS 02,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 04期

关键词：

D O I：

10.1063/1.346625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

F2 plasma-Si(100) surface interaction experiments have been conducted to understand basic mechanisms of surface modifications. Surface analysis has been investigated using x-ray photoelectron spectroscopy and nuclear reaction analysis. The experiments show deep penetration of fluorine into silicon and limitation of etching caused by oxide layers coming from contamination of the plasma by removal of oxygen from alumina walls of the reactor. Biasing of the silicon substrate enhanced carbon contamination.

引用

页码：1702 / 1709

页数：8

共 50 条

[1] Roughness scaling of plasma-etched silicon surfaces
Brault, P
Dumas, P
Salvan, F
JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (01) : L27 - L32
[2] DIFFUSION PROFILES OF BORON IMPLANTED INTO PLASMA-ETCHED SILICON SURFACES
SHENAI, K
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (05) : 1242 - 1245
[3] RUTHERFORD BACKSCATTERING STUDIES OF PLASMA-ETCHED SILICON
OEHRLEIN, GS
JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) : 3053 - 3062
[4] Quality Assessment of In Situ Plasma-Etched Diamond Surfaces for Chemical Vapor Deposition Overgrowth
Langer, Julia
Cimalla, Volker
Prescher, Mario
Ligl, Jana
Tegetmeyer, Bjoern
Schreyvogel, Christoph
Ambacher, Oliver
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 218 (11):
[5] Hydrogen passivation in plasma-etched polycrystalline silicon resistors
Tringe, JW
Deal, MD
Plummer, JD
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2000, 3 (11) : 517 - 519
[6] GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces
Tang, K.
Huang, W.
Chow, T. Paul
JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (04) : 523 - 528
[7] Plasma-etched, silicon nanowire, radial junction photovoltaic device
Smyrnakis, Athanasios
Dimitrakis, Panagiotis
Gogolides, Evangelos
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (45)
[8] Surface cleaning process for plasma-etched SiC wafer
Lihuan Zhao
Haiping Shang
Dahai Wang
Yang Liu
Miao Xue
Jiahan Yu
Weibing Wang
Applied Physics A, 2020, 126
[9] Characterization of Plasma-etched Surfaces of TlBr Crystals for Radiation Detectors
Nojima, Taro
Nogami, Mitsuhiro
Onodera, Toshiyuki
Hitomi, Keitaro
SENSORS AND MATERIALS, 2024, 36 (01) : 269 - 276
[10] GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces
K. Tang
W. Huang
T. Paul Chow
Journal of Electronic Materials, 2009, 38 : 523 - 528

← 1 2 3 4 5 →