FORMATION OF FERROELECTRIC BAMGF4 FILMS ON GAAS SUBSTRATES

被引：13
|
作者：
AIZAWA, K
ISHIWARA, H
机构：
[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 9B期
关键词：
FERROELECTRIC FILM; BAMGF4; GAAS; SOLID-PHASE CRYSTALLIZATION; CRYSTALLINITY;
D O I：
10.1143/JJAP.31.3232
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optimum conditions to form ferroelectric BaMgF4 films on GaAs substrates are investigated. It has been found in vacuum evaporation of BaMgF4 sources that combination of low-temperature deposition and subsequent high-temperature annealing is effective for forming BaMgF4 films that do not contain BaF2 and MgF2 crystallites. The optimum deposition and annealing temperatures obtained thus far are 300-degrees-C and 600-degrees-C, respectively. Crystallinity and electrical properties of the optimum films are characterized.
引用
收藏
页码：3232 / 3234
页数：3
相关论文
共 50 条
  • [1] Electrical properties of ferroelectric BaMgF4 films on Si substrates
    Aizawa, Koji
    Ishiwara, Hiroshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1994, 33 (9 B): : 5178 - 5181
  • [2] ELECTRICAL-PROPERTIES OF FERROELECTRIC BAMGF4 FILMS ON SI SUBSTRATES
    AIZAWA, K
    ISHIWARA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B): : 5178 - 5181
  • [3] Electrical properties of ferroelectric BaMgF4 films grown on GaAs substrates using AlGaAs buffer layer
    Hayashi, T
    Yoshihara, M
    Ohmi, S
    Tokumitsu, E
    Ishiwara, H
    APPLIED SURFACE SCIENCE, 1997, 117 : 418 - 422
  • [4] MOCVD of ferroelectric BaMgF4 thin films
    Ryazanov, M
    Korsakov, I
    Kuzmina, N
    JOURNAL DE PHYSIQUE IV, 1999, 9 (P8): : 471 - 478
  • [5] GROWTH AND CHARACTERIZATION OF FERROELECTRIC BAMGF4 FILMS
    SINHAROY, S
    BUHAY, H
    FRANCOMBE, MH
    TAKEI, WJ
    DOYLE, NJ
    RIEGER, JH
    LAMPE, DR
    STEPKE, E
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 409 - 413
  • [6] MOCVD of ferroelectric BaMgF4 thin films
    Ryazanov, M.
    Korsakov, I.
    Kuzmina, N.
    Journal De Physique. IV : JP, 1999, 9 pt 1 (08): : 8 - 471
  • [7] Growth and crystallinity of ferroelectric BaMgF4 films on (111)-oriented Pt films
    Aizawa, K
    Moriwaki, M
    Ichiki, T
    Tokumitsu, E
    Ishiwara, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (2B): : L234 - L237
  • [8] Ferroelectric domain inversion demonstrated in BaMgF4
    Muntele, I
    MRS BULLETIN, 2001, 26 (12) : 968 - 968
  • [9] Characteristics of ferroelectric transistors with BaMgF4 dielectric
    Lyu, JS
    Jeong, JW
    Kim, KH
    Kim, BW
    Yoo, HJ
    ETRI JOURNAL, 1998, 20 (02) : 241 - 249
  • [10] Ferroelectric Domain Inversion Demonstrated in BaMgF4
    Iulia Muntele
    MRS Bulletin, 2001, 26 : 968 - 968
12345