MOCVD of ferroelectric BaMgF4 thin films

被引：0
|
作者：
Ryazanov, M. [1 ]
Korsakov, I. [1 ]
Kuzmina, N. [1 ]
机构：
[1] Laboratory of Coordination Chemistry, Inorganic Chemistry Department, Moscow State University, Leninskie Gory, 119899 Moscow V-234, Russia
来源：
Journal De Physique. IV : JP | 1999年 / 9 pt 1卷 / 08期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：8 / 471
相关论文
共 50 条
  • [1] MOCVD of ferroelectric BaMgF4 thin films
    Ryazanov, M
    Korsakov, I
    Kuzmina, N
    JOURNAL DE PHYSIQUE IV, 1999, 9 (P8): : 471 - 478
  • [2] GROWTH AND CHARACTERIZATION OF FERROELECTRIC BAMGF4 FILMS
    SINHAROY, S
    BUHAY, H
    FRANCOMBE, MH
    TAKEI, WJ
    DOYLE, NJ
    RIEGER, JH
    LAMPE, DR
    STEPKE, E
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 409 - 413
  • [3] GROWTH AND THE MICROSTRUCTURAL AND FERROELECTRIC CHARACTERIZATION OF ORIENTED BAMGF4 THIN-FILMS
    SINHAROY, S
    BUHAY, H
    BURKE, MG
    LAMPE, DR
    POLLAK, TM
    IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1991, 38 (06) : 663 - 671
  • [4] FORMATION OF FERROELECTRIC BAMGF4 FILMS ON GAAS SUBSTRATES
    AIZAWA, K
    ISHIWARA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (9B): : 3232 - 3234
  • [5] Electrical properties of ferroelectric BaMgF4 films on Si substrates
    Aizawa, Koji
    Ishiwara, Hiroshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1994, 33 (9 B): : 5178 - 5181
  • [6] Growth and crystallinity of ferroelectric BaMgF4 films on (111)-oriented Pt films
    Aizawa, K
    Moriwaki, M
    Ichiki, T
    Tokumitsu, E
    Ishiwara, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (2B): : L234 - L237
  • [7] ELECTRICAL-PROPERTIES OF FERROELECTRIC BAMGF4 FILMS ON SI SUBSTRATES
    AIZAWA, K
    ISHIWARA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B): : 5178 - 5181
  • [8] Ferroelectric domain inversion demonstrated in BaMgF4
    Muntele, I
    MRS BULLETIN, 2001, 26 (12) : 968 - 968
  • [9] Characteristics of ferroelectric transistors with BaMgF4 dielectric
    Lyu, JS
    Jeong, JW
    Kim, KH
    Kim, BW
    Yoo, HJ
    ETRI JOURNAL, 1998, 20 (02) : 241 - 249
  • [10] Ferroelectric Domain Inversion Demonstrated in BaMgF4
    Iulia Muntele
    MRS Bulletin, 2001, 26 : 968 - 968
12345