MOCVD of ferroelectric BaMgF4 thin films

For the deposition of non-oxide ferroelectric fluoride BaMgF4 thin films, the single source MOCVD technique with a flash evaporation feeder was developed. To find suitable volatile precursors, a series of hexafluoroacetylacetonate barium and magnesium complexes was studied: Mg(hfa)(2)(H2O)(2), Mg(hfa)(2), [Ba(hfa)(2)](infinity), Ba(hfa)(2)(tetraglyme), Ba(hfa)(2)(phen)(2). In terms of the thermal behavior results, complexes Mg(hfa)(2) and Ba(hfa)(2)(tetraglyme) were chosen as MOCVD precursors and used for deposition of BaMgF4 on MgO(100) single crystalline substrates. Effects of the deposition process parameters (reactor temperature, oxygen now) on the composition and morphology of the films as well as on phase composition and preferred orientation were investigated.