FORMATION OF FERROELECTRIC BAMGF4 FILMS ON GAAS SUBSTRATES

被引：13
|
作者：
AIZAWA, K
ISHIWARA, H
机构：
[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 9B期
关键词：
FERROELECTRIC FILM; BAMGF4; GAAS; SOLID-PHASE CRYSTALLIZATION; CRYSTALLINITY;
D O I：
10.1143/JJAP.31.3232
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optimum conditions to form ferroelectric BaMgF4 films on GaAs substrates are investigated. It has been found in vacuum evaporation of BaMgF4 sources that combination of low-temperature deposition and subsequent high-temperature annealing is effective for forming BaMgF4 films that do not contain BaF2 and MgF2 crystallites. The optimum deposition and annealing temperatures obtained thus far are 300-degrees-C and 600-degrees-C, respectively. Crystallinity and electrical properties of the optimum films are characterized.
引用
收藏
页码：3232 / 3234
页数：3
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